TITLE

A new InP-based heterojunction bipolar transistor utilizing an

AUTHOR(S)
Wu, Y.H.; Su, J.S.
PUB. DATE
January 1995
SOURCE
Applied Physics Letters;1/16/1995, Vol. 66 Issue 3, p347
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates a lattice-matched indium aluminum gallium arsenic/indium phosphide grown by low-pressure metalorganic chemical vapor deposition. Manifestation of zero conduction band and large valence band discontinuities; Resolution of the potential spike energy in a direct measurement technique; Indication of an offset voltage.
ACCESSION #
4203914

 

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