TITLE

Epitaxial regrowth of ruby on sapphire for an integrated thin film stress sensor

AUTHOR(S)
Wen, Q.; Clarke, D.R.
PUB. DATE
January 1995
SOURCE
Applied Physics Letters;1/16/1995, Vol. 66 Issue 3, p293
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Describes the formation of thin film ruby by epitaxial of chromium-doped amorphous alumina on sapphire. Incorporation of chromium onto aluminum cation sites by ion channeling measurements; Confirmation of regrown 1 and 2 luminescence lines; Indication of regrown ruby layer.
ACCESSION #
4203895

 

Related Articles

  • Microstructure of epitaxially oriented superconducting YBa2Cu3O7-x films grown on (100) MgO by metalorganic decomposition. Lee, S.-Tong; Chen, Samuel; Hung, L. S.; Braunstein, G. // Applied Physics Letters;7/17/1989, Vol. 55 Issue 3, p286 

    The microstructure in epitaxially oriented thin films of YBa[sub 2]Cu[sub 3]O[sub 7 - x] grown on (100) MgO by metatorganic decomposition has been studied by transmission electron microscopy and ion channeling. The as-prepared films consisted of single-crystal platelets lying fiat on the MgO...

  • Ion channeling studies on epitaxially grown a-axis YBa[sub 2]Cu[sub 3]O[sub 7-delta] films. Ito, W.; Yoshida, Y. // Applied Physics Letters;8/22/1994, Vol. 65 Issue 8, p1051 

    Investigates the crystal structure of epitaxially grown a-axis oriented YBa[sub 2]Cu[sub 3]O[sub 7-delta] films by ion channeling measurements. Decrease of the lattice constants in the film plane with increasing film thickness; Close values of the constants in the film plane to the lattice...

  • Ion channeling and x-ray diffraction study of tensely strained GaInP layers on InP. Cohen, G. M.; Ritter, D. // Applied Physics Letters;1/4/1999, Vol. 74 Issue 1, p43 

    Presents an ion channeling and x-ray diffraction study of tensely strained GaInP layers on InP. Angular difference between the substrate and the layer channeling angles; Negligible relaxation.

  • Ion channeling studies of epitaxial Fe and Co silicides on Si. Schwarz, C.; Onda, N.; Goncalves-Conto, S.; Sirringhaus, H.; von Känel, H.; Pixley, R. E. // Journal of Applied Physics;12/1/1994, Vol. 76 Issue 11, p7256 

    Presents ion channeling studies of epitaxial iron and cobalt silicides on silicon. Description of the strain measurements performed; Factor to which the epitaxial stabilization of the cesium chloride phases is attributed; Technique used to determine the crystalline quality of thick bcc iron and...

  • Growth characterization of YBa2Cu3O7-x thin films on (100) MgO. Li, Q.; Meyer, O.; Xi, X. X.; Geerk, J.; Linker, G. // Applied Physics Letters;7/17/1989, Vol. 55 Issue 3, p310 

    The growth features of YBa[sub 2]Cu[sub 3]O[sub 7 - x] thin filmd on (100) MgO substrates were studied by He ion channeling and x-ray diffraction measurements. A minimum yield value of 7% at 2 MeV He ion energy and a standard deviation of the crystallite misorientation of only 0.1° show that...

  • Ion-channeling study of the SiC/Si/SiO[sub 2]/Si interface. Jiang, W.; Thevuthasan, S.; Weber, W.J.; Namavar, F. // Applied Physics Letters;6/6/1999, Vol. 74 Issue 23, p3501 

    Studies 3C-SiC films grown by chemical vapor deposition on a Si/SiO[sub 2]/Si substrate using ion channeling. Minimum yield for the SiC thin film; Existence of a superlattice structure at the SiC-Si interface revealed by angular scans; Strain-induced angular shift; Model proposed to interpret...

  • Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices. Vispute, R. D.; Talyansky, V.; Choopun, S.; Sharma, R. P.; Venkatesan, T.; He, M.; Tang, X.; Halpern, J. B.; Spencer, M. G.; Li, Y. X.; Salamanca-Riba, L. G.; Iliadis, A. A.; Jones, K. A. // Applied Physics Letters;7/20/1998, Vol. 73 Issue 3 

    ZnO thin films have been grown heteroepitaxially on epi-GaN/sapphire (0001) substrates. Rutherford backscattering spectroscopy, ion channeling, and high resolution transmission electron microscopy studies revealed high-quality epitaxial growth of ZnO on GaN with an atomically sharp interface....

  • Setup for in situ x-ray diffraction and ion-channeling studies of... Grigull, S.; Foltyn, S.; Hollander, M.G.; Evans, C.R.; Nastasi, M. // Review of Scientific Instruments;Sep99, Vol. 70 Issue 9, p3656 

    Introduces a novel setup that combines energy-dispersive x-ray diffraction and ion-channeling capabilities for damage studies on single-crystalline thin films irradiated with 100-720 keV heavy ions. Measurement of damage-related lattice strain; Provision of information on bombardment-induced...

  • Growth of YBaCuO thin films on random and (100) aligned ZrO2 substrates. Li, Q.; Meyer, O.; Xi, X. X.; Geerk, J.; Linker, G. // Applied Physics Letters;10/23/1989, Vol. 55 Issue 17, p1792 

    The growth quality of thin, superconducting YBaCuO films has been compared on random and (100) oriented yttrium-stabilized zirconia substrates using x-ray diffraction and ion channeling experiments. Superior growth is observed on (100) substrates with narrow mosaic distributions (0.4°) and a...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics