Surface potential fluctuations in metal-oxide-semiconductor capacitors fabricated on different

Bano, E.; Ouisse, T.
November 1994
Applied Physics Letters;11/21/1994, Vol. 65 Issue 21, p2723
Academic Journal
Investigates the surface metal fluctuations in metal-oxide-semiconductor (MOS) capacitors fabricated on silicon carbide (SiC) polytypes. Factors attributing to the activated transport in silicon carbide inversion layers; Characterization of MOS errors; Comparison of fluctuations between SiC MOS and Si/silicon dioxide.


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