TITLE

Surface potential fluctuations in metal-oxide-semiconductor capacitors fabricated on different

AUTHOR(S)
Bano, E.; Ouisse, T.
PUB. DATE
November 1994
SOURCE
Applied Physics Letters;11/21/1994, Vol. 65 Issue 21, p2723
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the surface metal fluctuations in metal-oxide-semiconductor (MOS) capacitors fabricated on silicon carbide (SiC) polytypes. Factors attributing to the activated transport in silicon carbide inversion layers; Characterization of MOS errors; Comparison of fluctuations between SiC MOS and Si/silicon dioxide.
ACCESSION #
4203872

 

Related Articles

  • Comparison of trapping-detrapping properties of mobile charge in alkali contaminated.... Raynaud, C.; Autran, J.L. // Applied Physics Letters;5/1/1995, Vol. 66 Issue 18, p2340 

    Investigates the trapping-detrapping properties of alkali mobile ions. Implementation of a thermally stimulated ionic current measurements on aluminum-oxide-silicon carbide capacitors; Detection of two traps at the interface of oxide and silicon carbide; Utilization of a numerical method to...

  • Dynamic charge storage in 6H silicon carbide. Gardner, C.T.; Cooper, J.A. // Applied Physics Letters;9/7/1992, Vol. 61 Issue 10, p1185 

    Details the fabrication of pn-junction storage capacitors in 6H silicon carbide. Dominance of surface generation at the mesa edges in the charge decay; Dependence of storage time on the method of surface passivation; Activation energies exhibited by devices passivated by dry and wet oxidation.

  • Low-frequency, high-temperature conductance and capacitance measurements on metal-oxide-silicon carbide capacitors. Ouisse, T.; Bécourt, N.; Jaussaud, C.; Templier, F. // Journal of Applied Physics;1/1/1994, Vol. 75 Issue 1, p604 

    Low-frequency capacitance and conductance measurements have been extensively performed from 1 Hz to 100 kHz and in the 293–673 K temperature range, on metal-oxide-semiconductor (MOS) capacitors made on silicon carbide material. The energy distribution of the trap time constants, capture...

  • Microwave Switches Based on 4H-SiC p–i–n Diodes. Bludov, A. V.; Boltovets, N. S.; Vasilevskii, K. V.; Zorenko, A. V.; Zekentes, K.; Krivutsa, V. A.; Kritskaya, T. V.; Lebedev, A. A. // Technical Physics Letters;Feb2004, Vol. 30 Issue 2, p123 

    Problems pertaining to the modeling and development of a microwave modulator based on 4H-SiC p–i–n diodes are considered. The results of theoretical and experimental investigations of the microwave characteristics of 4H-SiC p–i–n diodes and the parameters of a...

  • Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide. Chung, G. Y.; Chung, G.Y.; Tin, C. C.; Tin, C.C.; Williams, J. R.; Williams, J.R.; McDonald, K.; Di Ventra, M.; Pantelides, S. T.; Pantelides, S.T.; Feldman, L. C.; Feldman, L.C.; Weller, R. A.; Weller, R.A. // Applied Physics Letters;3/27/2000, Vol. 76 Issue 13 

    Results of capacitance-voltage measurements are reported for metal-oxide-semiconductor capacitors fabricated using the 4H polytype of silicon carbide doped with either nitrogen (n) or aluminum (p). Annealing in nitric oxide after a standard oxidation/reoxidation process results in a slight...

  • Analysis of C-face 4H-SiC MOS capacitors with ZrO2 gate dielectric. Le-Shan Chan; Yu-Hao Chang; Kung-Yen Lee // Materials Science Forum;2014, Vol. 778-780, p635 

    ZrO2 films were deposited on C-face 4H-SiC substrates by using an RF sputter at a temperature of 200°C. Then, ZrO2 films were treated with RTA (rapid thermal annealing) process in Argon (Ar) and N2 ambient at 600°C, 700°C and 800°C for 4 minutes, respectively. The samples with RTA...

  • Retarded Oxide Growth on 4H-SiC(0001) Substrates due to Sacrificial Oxidation. Takuji Hoso; Yusuke Uenishi; Yuki Nakano; Takashi Nakamura; Takayoshi Shimura; Heiji Watanabe // Materials Science Forum;2014, Vol. 778-780, p562 

    The impact of a sacrificial oxidation treatment on subsequent gate oxide formation on 4H-SiC(0001) substrates was investigated. Although x-ray photoelectron spectroscopy (XPS) analysis revealed that the SiC surface after removing a 40-nm-thick sacrificial oxide by diluted HF solution was almost...

  • Refreshable Decrease In Peak Height Of Ion Beam Induced Transient Current From Silicon Carbide Metal-Oxide-Semiconductor Capacitors. Ohshima, T.; Iwamoto, N.; Onoda, S.; Makino, T.; Deki, M.; Nozaki, S. // AIP Conference Proceedings;6/1/2011, Vol. 1336 Issue 1, p660 

    MOS capacitors were fabricated on an n-type 6H-SiC epitaxial layer, and charge induced in the nMOS capacitors by 15 MeV oxygen ion microbeams was measured using Transient Ion Beam Induced Current (TIBIC). The peak amplitude of TIBIC signals decreases and the fall time increases with increasing...

  • Effect of post oxidation annealing on electrical characteristics of Ni/SiO/4 H-SiC capacitor with varying oxide thickness. Gupta, Sanjeev; Azam, A.; Akhtar, J. // Semiconductors;Apr2012, Vol. 46 Issue 4, p545 

    This paper describes an experimental observation of post oxidation annealing (POA) treatment on current-voltage and capacitance-voltage characteristics of Ni/SiO/4 H-SiC system with varying oxide thickness. The leakage current of fabricated structures shows an asymmetric behavior having...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics