TITLE

Gatable ultrafast field-assisted photoemission to lambda=1.55 mum from In[sub 0.5]Ga[sub 0.5]As

AUTHOR(S)
Parker, T.R.; Fawcett, A.H.
PUB. DATE
November 1994
SOURCE
Applied Physics Letters;11/21/1994, Vol. 65 Issue 21, p2711
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the field-assisted photoemission of indium-gallium-arsenic heterostructures. Magnitude of the photoemission wavelength; Characterization of the long-wavelength portion of the photoemissive response; Significance of a 14 picosecond device response time; Creation of Schottky contacts.
ACCESSION #
4203868

 

Related Articles

  • Infrared response of Pt/Si/ErSi[sub 1.7] heterostructure: Tunable internal photoemission sensor. Pahun, L.; Campidelli, Y. // Applied Physics Letters;3/9/1992, Vol. 60 Issue 10, p1166 

    Demonstrates the internal photoemission response of a metal-silicon-metal heterostructure. Modification of the photoresponse of the device; Increase in quantum efficiency; Attribution of the changes to the modulation of the potential barrier; Achievement of the electrical and internal...

  • Room-temperature violet stimulated emission from optically pumped AlGaN/GaInN double.... Amano, H.; Tanaka, T.; Kunii, Y.; Kato, K.; Kim, S.T.; Akasaki, I. // Applied Physics Letters;3/14/1994, Vol. 64 Issue 11, p1377 

    Examines the room-temperature violet stimulated emission from optically pumped aluminum gallium nitride/gallium indium nitride (GaInN) heterostructures. Fabrication of the materials by metalorganic vapor phase epitaxy; Use of GaInN as an active layer; Peak wavelength of the stimulated emission...

  • Photoemission study of the solid-state interdiffusion in hybrid Fe/ZnSe/GaAs(001) heterostructures. Mosca, D. H.; Abbate, M.; Schreiner, W. H.; Etgens, V. H.; Eddrief, M. // Journal of Applied Physics;12/15/2001, Vol. 90 Issue 12, p5973 

    We report the chemical stability of the hybrid Fe/ZnSe/GaAs heterostructure prepared by molecular-beam epitaxy. Analyses of photoemission spectra show a remarkable chemical stability of the Fe/ZnSe(001) interface up to 380 °C, where the effective disruption of the heterostructure occurs,...

  • Why do (2×4) GaAs and InAs (001) surfaces exposed to phosphorus have so different behavior? Elastic strain arguments. Wallart, X.; Priester, C.; Deresmes, D.; Gehin, T.; Mollot, F. // Applied Physics Letters;8/5/2002, Vol. 81 Issue 6, p1086 

    When exposed to phosphorus, the (2×4) GaAs surface tends rapidly to roughen whereas it is not the case for the (2×4) InAs one, even after long exposure times. X-ray photoemission measurements show that the incorporated phosphorus amount is similar in both cases. The elastic energy...

  • Direct optical measurement of the valence band offset of p[sup +] Si[sub 1-x-y]Ge[sub x]C[sub y]/p[sup -] Si(100) by heterojunction internal photoemission. Chang, C. L.; Rokhinson, L. P.; Sturm, J. C. // Applied Physics Letters;12/14/1998, Vol. 73 Issue 24 

    Optical absorption measurements have been performed to study the effect of substitutional carbon on the valence band offset of compressively strained p[sup +] Si[sub 1-x-y]Ge[sub x]C[sub y]/(100) p[sup -] Si. The compressively strained p[sup +] Si[sub 1-x-y]Ge[sub x]C[sub y]/(100) p[sup -] Si...

  • Room-temperature stimulated emission in GaN/AlGaN separate confinement heterostructures grown by.... Schmidt, T.J.; Yang, X.H.; Shan, W.; Song, J.J.; Salvador, A.; Kim, W.; Aktas, O.; Botchkarev, A.; Morkoc, H. // Applied Physics Letters;3/25/1996, Vol. 68 Issue 13, p1820 

    Investigates the optically pumped stimulated emission in gallium nitride/aluminum gallium nitride separate confinement heterostructures. Growth of the structures by molecular beam epitaxy; Use of frequency tunable nanosecond laser system.

  • X-ray photoelectron diffraction study of YbAs/GaAs(001) and ScAs/GaAs(001) heterostructures. Lépine, B.; Quémerais, A.; Sébilleau, D.; Jézéquel, G.; Agliz, D.; Ballini, Y.; Guivarc’h, A. // Journal of Applied Physics;11/1/1994, Vol. 76 Issue 9, p5218 

    Describes the polar angle distributions of core level photoemission intensities recorded on YbAs/GaAs(001) and ScAs/GaAs(001) heterostructures. Advantages of the photoelectron diffraction method; Morphology of thin epitaxial layers; Description of the surface crystallinity of YbAs and ScAs...

  • Photoemission of polarized electrons from InAlGaAs/GaAs superlattices with minimum conduction band offsets. Gerchikov, L. G.; Mamaev, Yu. A.; Subashiev, A. V.; Yashin, Yu. P.; Vasil'ev, D. A.; Kuz'michev, V. V.; Zhukov, A. E.; Semenova, E. S.; Vasil'ev, A. P.; Ustinov, V. M. // Semiconductors;Nov2006, Vol. 40 Issue 11, p1326 

    Photoemission of polarized electrons from heterostructures based on InAlGaAs/GaAs superlattices with minimum conduction-band offsets is investigated. The comparison of the excitation energy dependence of the photoemission polarization degree with the calculated spectra make it possible to...

  • Dember effect induced photovoltage in perovskite p-n heterojunctions. Jin, Kui-Juan; Zhao, Kun; Lu, Hui-Bin; Liao, Leng; Yang, Guo-Zhen // Applied Physics Letters;8/20/2007, Vol. 91 Issue 8, p081906 

    An unusual and rather large transient lateral photovoltage (LPV) has been observed in La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3 and La0.7Sr0.3MnO3/Si heterojunctions under the nonuniform irradiation of pulsed laser. The irreversible LPVs on both sides of a p-n junction challenge the well established model...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics