Radiative isoelectronic complexes introduced during the growth of Si and Si[sub 1-x]Ge[sub x]/Si

Moore, Karen L.; King, Oliver
November 1994
Applied Physics Letters;11/21/1994, Vol. 65 Issue 21, p2705
Academic Journal
Investigates the introduction of radiative isoelectronic impurity complexes during the growth of silicon and silicon-germanium/silicon superlattices. Application of molecular beam epitaxy; Components of the impurity complex; Absence of the blueshift no-phonon line in beryllium complexes.


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