TITLE

Near-field photoconductivity: Application to carrier transport in InGaAsP quantum well lasers

AUTHOR(S)
Buratto, S.K.; Hsu, J.W.P.
PUB. DATE
November 1994
SOURCE
Applied Physics Letters;11/21/1994, Vol. 65 Issue 21, p2654
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the application of a near-field photoconductivity (NPC) technique to indium gallium arsenic phosphide quantum well lasers. Importance of near field optics in spot size improvement and photocurrent imaging; Advantages of the NPC; Use of the near-field scanning optical microscopy apparatus.
ACCESSION #
4203849

 

Related Articles

  • Magnetotransport and THz-Optical Investigations at Devices with HgTe Quantum Wells. Gouider, F.; Vasilyev, Y. B.; Bug�r, M.; K�nemann, J.; Br�ne, C.; Buhmann, H.; Nachtwei, G. // Journal of Low Temperature Physics;Apr2010, Vol. 159 Issue 1/2, p184 

    We investigated the magnetoconductivity and the Terahertz (THz) photo-conductivity of devices with HgTe quantum wells embedded in barrier layers of HgCdTe. For the photoconductivity measurements, a THz laser system ( p-Ge-Laser) is applied. This laser uses transitions between Landau levels of...

  • Tunneling lifetime broadening of the quantum well intersubband photoconductivity spectrum. Levine, B. F.; Bethea, C. G.; Choi, K. K.; Walker, J.; Malik, R. J. // Applied Physics Letters;7/18/1988, Vol. 53 Issue 3, p231 

    We have measured, for the first time, the continuous infrared (λ∼10 μm) photoconductivity spectrum, for an intersubband absorption photoexcited tunneling quantum well detector. The line shape is broadened and asymmetrical with respect to the zero-bias Lorentzian absorption spectrum....

  • Exchange interactions in quantum well subbands. Bandara, K. M. S. V.; Coon, D. D.; O, Byungsung; Lin, Y. F.; Francombe, M. H. // Applied Physics Letters;11/14/1988, Vol. 53 Issue 20, p1931 

    It is shown that exchange interactions in the two-dimensional electron gas in quantum wells could cause observable effects on subband energies and intersubband transition energies. In the case of doped quantum wells, the intrasubband exchange interaction can produce an energy shift which is...

  • Observation of a negative persistent photoconductivity effect in In[sub 0.25]Ga[sub 0.75]Sb/InAs.... Ikai Lo; Mitchel, W.C. // Applied Physics Letters;8/22/1994, Vol. 65 Issue 8, p1024 

    Observes a negative persistent photoconductivity effect in In[sub 0.25]Ga[sub 0.75]Sb/InAs quantum wells with Shubnikov-de Haas measurements. Measured saturated reduction of the electron density in the InAs well; Estimated electron effective mass; Relationship of electron quantum lifetime to...

  • Normal incidence parallel intraband photoconductivity in GaAs/AIGaAs multiquantum wells. Rosencher, E.; Martinet, E.; Bockenhoff, E.; Bois, Ph.; Delaitre, S.; Hirtz, J.P. // Applied Physics Letters;6/10/1991, Vol. 58 Issue 23, p2587 

    Studies normal incidence parallel intraband photoconductivity in GaAs/AlGaAs multiquantum wells. Infrared radiations detected at normal incidence; Photoconductivity spectra; Intersubband transitions' involvement in the detection process.

  • Large photoconductive gain in quantum well infrared photodetectors. Hasnain, G.; Levine, B. F.; Gunapala, S.; Chand, Naresh // Applied Physics Letters;8/6/1990, Vol. 57 Issue 6, p608 

    We demonstrate for the first time that a quantum well infrared photodetector based on bound-to-continuum state intersubband transitions can have a photoconductive gain much greater than unity similar to extrinsic photoconductors. An optical gain g=8.1 was determined by comparing the optical...

  • Response to "Comment on 'Photoconductivity mechanism of quantum well infrared photodetectors under localized photoexcitation' " [Appl. Phys. Lett. 76, 4010 (2000)]. Ershov, M. // Applied Physics Letters;6/26/2000, Vol. 76 Issue 26 

    Responds to a comment made by M. Ryzhii and I. Khmyrova on the article 'Photoconductivity mechanism of quantum well infrared photodetectors under localized photoexcitation.' Ryzhii and Khmyrova's interpretation of the results presented in the letter as a simulation artifact; Physical processes...

  • Comment on "Photoconductivity mechanism of quantum well infrared photodetectors under localized photoexcitation" [Appl. Phys. Lett. 73, 3432 (1998)]. Ryzhii, M.; Khmyrova, I. // Applied Physics Letters;6/26/2000, Vol. 76 Issue 26 

    Comment on the article 'Photoconductivity mechanism of quantum well infrared photodetectors under localized photoexcitation,' by M. Ershov. Artificial situation of photoexcitation of only one quantum well (QW) in a multiple quantum well infrared photodetector consisting of identical QWs and...

  • Persistent photoconductivity in quantum well resonators. Sollner, T. C. L. G.; Le, H. Q.; Correa, C. A.; Goodhue, W. D. // Applied Physics Letters;7/1/1985, Vol. 47 Issue 1, p36 

    We have made the first observation of persistent photoconductivity in resonant tunneling structures. The spectral dependence suggests that it arises from Si DX centers in the AlGaAs barriers, and calculations based on a simple model using this assumption agree well with the observations. This...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics