TITLE

Conjugated polymer light-emitting diodes on silicon substrates

AUTHOR(S)
Baigent, D.R.; Marks, R.N.
PUB. DATE
November 1994
SOURCE
Applied Physics Letters;11/21/1994, Vol. 65 Issue 21, p2636
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the fabrication of polymer light-emitting diodes on silicon substrates. Application of conjugated polymers in electroluminescent devices; List of materials used as hole-injecting electrodes; Formation of poly(p-phenylene vinylene) on top of the poly(cyanoterephthalylidene) layer through thermal conversion.
ACCESSION #
4203842

 

Related Articles

  • Efficient photodiodes from interpenetrating polymer networks. Halls, J.J.M.; Walsh, C.A. // Nature;8/10/1995, Vol. 376 Issue 6540, p498 

    Presents a study which shows that the interpenetrating network formed from a mixture of two semiconducting polymers provides a methodical framework for efficient photodiodes. Spatially distributed interfaces necessary for efficient charge photogeneration; Means for separately collecting the...

  • Visible light emission from a pn junction of porous silicon and microcrystalline silicon carbide. Futagi, Toshiro; Matsumoto, Takahiro; Katsuno, Masakazu; Ohta, Yasumitsu; Mimura, Hidenori; Kitamura, Koich // Applied Physics Letters;8/30/1993, Vol. 63 Issue 9, p1209 

    Fabricates a type of light emitting diode (LED) based on porous silicon (PS) and microcrystalline silicon carbide pn junction. Measurement of visible light emission at forward bias voltages; Uniformity of emission rate over an area of 1 square centimeter; Improvement in the practical use of PS LED.

  • A polymer blend approach to fabricating the hole transport layer for polymer light-emitting diodes. He Yan; Qinglan Huang; Scott, Brian J.; Marks, Tobin J. // Applied Physics Letters;5/10/2004, Vol. 84 Issue 19, p3873 

    This contribution describes an approach to fabricating high-efficiency hole-transport layers (HTLs) for polymer light-emitting diodes (PLEDs). HTLs fabricated by this approach have two components: a siloxane-derivatized, crosslinkable, hole-transporting material and a hole-transporting polymer....

  • Imaging Joule heating in a conjugated-polymer light-emitting diode using a scanning thermal microscope. Boroumand, F. A.; Voigt, M.; Lidzey, D. G.; Hammiche, A.; Hill, G. // Applied Physics Letters;6/14/2004, Vol. 84 Issue 24, p4890 

    We have used a scanning thermal microscope to image Joule heating in a conjugated-polymer light-emitting diode (LED). Our LEDs had an active diameter of 100 μm, which was defined using an insulating layer of silicon nitride patterned onto the LED anode. At an average power input of 0.2 mW...

  • Integration of polymer light-emitting diode and polymer waveguide on Si substrate. Yuan-Yu Lin; Chung Cheng; Hua-Hsien Liao; Sheng-Fu Horng; Hsin-Fei Meng; Chain-Shu Hsu // Applied Physics Letters;8/7/2006, Vol. 89 Issue 6, p063501 

    We integrate a polymer light-emitting diode (PLED) and a polymer waveguide on a Si substrate. The light emitted from the PLED is coupled to the waveguide by a diffuser and a reflection layer with coupling efficiency about 1%. There is no delay nor distortion between PLED emission and the light...

  • Influence of the orientation of the silicon substrate on the properties of avalanche Si:Er:O light-emitting structures. Sobolev, N. A.; Nikolaev, Yu. A.; Emel�yanov, A. M.; Vdovin, V. I. // Semiconductors;Jun99, Vol. 33 Issue 6, p613 

    The influence of the orientation of silicon on the structural and luminescence properties of avalanche light-emitting diodes fabricated by the coimplantation of erbium and oxygen followed by solid-phase epitaxial (SPE) crystallization of the amorphized layer is considered. The luminescence...

  • Optical and electrical properties of GaAs light emitting diodes grown on Si substrates by a... Yazawa, Y.; Minemura, T. // Applied Physics Letters;3/25/1991, Vol. 58 Issue 12, p1292 

    Studies optical and electrical properties of GaAs light-emitting diodes grown on silicon substrates by a hybrid method of molecular beam and liquid phase epitaxies. Progress on heteroepitaxy; Fabrication of light-emitting diodes.

  • Silicon is foundation for LED display. Wallace, John // Laser Focus World;Apr2000, Vol. 36 Issue 4, p15 

    Provides information on the beneficial use of silicon (Si) wafer in fabricating blue light-emitting diodes (LED) on a Si substrate. Description on the use of molecular-beam epitaxy and low-pressure metal-organic chemical-vapor deposition; Peak wavelength being emitted by the LED.

  • Silicon-based organic light-emitting diode operating at a wavelength of 1.5 μm. Curry, R. J.; Curry, R.J.; Gillin, W. P.; Gillin, W.P.; Knights, A. P.; Knights, A.P.; Gwilliam, R. // Applied Physics Letters;10/9/2000, Vol. 77 Issue 15 

    1.5-μm light-emitting diodes which operate at room temperature have been fabricated on silicon substrates. The devices use an erbium-containing organic light-emitting diode (OLED) structure which utilizes p[sup ++] silicon as the hole injection contact. The OLEDs use N,...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics