Direct measurements of lattice parameter variations and relaxation kinetics in strained

Sardela Jr., M.R.; Hansson, G.V.
September 1994
Applied Physics Letters;9/12/1994, Vol. 65 Issue 11, p1442
Academic Journal
Presents direct measurements of anneal-induced variations of the in-plane and normal components of the lattice parameter of strained silicon- germanium/Si heterostructures. Technique used in allowing determination of strain levels; Observation of furnace annealing in argon ambient; Use of two-bounce germanium analyzer crystal in the reciprocal space mapping.


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