TITLE

Hall measurements on selectively doped InSb heterostructures grown by

AUTHOR(S)
Songpongs, P.; Andersson, T.G.
PUB. DATE
September 1994
SOURCE
Applied Physics Letters;9/12/1994, Vol. 65 Issue 11, p1433
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines electrical conduction mechanisms in molecular beam epitaxy-grown indium antimonide heterostructures on gallium arsenide. Observation of increase in free carrier concentration; Measurement of the reduction of mobility; Description of temperature-dependent carrier concentrations using the simple model of multilayer conduction.
ACCESSION #
4203827

 

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