Anisotropic structural, electronic, and optical properties of InGaAs grown by a molecular beam

Goldman, R.S.; Wieder, H.H.
September 1994
Applied Physics Letters;9/12/1994, Vol. 65 Issue 11, p1424
Academic Journal
Investigates the structural, electronic, and optical properties of indium gallium arsenide grown by molecular beam epitaxy on misoriented substrates. Anisotropies in bulk strain relaxation; Identification of a polarization anisotropy in cathodoluminescence (CL) for epilayers; Execution of scanning CL measurements.


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