TITLE

Anisotropic structural, electronic, and optical properties of InGaAs grown by a molecular beam

AUTHOR(S)
Goldman, R.S.; Wieder, H.H.
PUB. DATE
September 1994
SOURCE
Applied Physics Letters;9/12/1994, Vol. 65 Issue 11, p1424
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the structural, electronic, and optical properties of indium gallium arsenide grown by molecular beam epitaxy on misoriented substrates. Anisotropies in bulk strain relaxation; Identification of a polarization anisotropy in cathodoluminescence (CL) for epilayers; Execution of scanning CL measurements.
ACCESSION #
4203824

 

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