Growth of high quality Ge films on Si(111) using Sb as surfactant

Larsson, Mats I.; Wei-Xin Ni
September 1994
Applied Physics Letters;9/12/1994, Vol. 65 Issue 11, p1409
Academic Journal
Details the growth and characterization of high quality germanium (GE) layers on silicon(111) substrates. Indication of Ge layer-by-layer epitaxy using cusplike reflection high-energy electron diffraction (RHEED) intensity oscillations; Determination of crystalline quality through high resolution x-ray diffraction analysis; Features of the RHEED intensity.


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