TITLE

High-quality 4H-SiC homoepitaxial layers grown by step-controlled epitaxy

AUTHOR(S)
Itoh, Akira; Akita, Hironobu
PUB. DATE
September 1994
SOURCE
Applied Physics Letters;9/12/1994, Vol. 65 Issue 11, p1400
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the hexagonal 4H polytype silicon carbide (4H-SiC) bulk crystal growth by a modified Lely method. Utilization of step-controlled epitaxy on 4H-SiC substrates; Physical properties of 4H-SiC epilayers; Use of Hall effects and photoluminescence measurements in characterizing physical properties of 4H-SiC epilayers.
ACCESSION #
4203814

 

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