Selective excitation of the photoluminescence and the energy levels of ultrasmall InGaAs/GaAs

Fafard, S.; Leonard, D.
September 1994
Applied Physics Letters;9/12/1994, Vol. 65 Issue 11, p1388
Academic Journal
Investigates the energy levels of nanometer size indium gallium arsenide/ GaAs quantum dots (QD) and selective excitation of the photoluminescence. Synthesis of QD structures with diameters comparable to electrons' de Broglie wavelength; Use of coherent islanding growth effect in highly strained semiconductors; Observation of positions of QD peaks.


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