TITLE

Selective excitation of the photoluminescence and the energy levels of ultrasmall InGaAs/GaAs

AUTHOR(S)
Fafard, S.; Leonard, D.
PUB. DATE
September 1994
SOURCE
Applied Physics Letters;9/12/1994, Vol. 65 Issue 11, p1388
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the energy levels of nanometer size indium gallium arsenide/ GaAs quantum dots (QD) and selective excitation of the photoluminescence. Synthesis of QD structures with diameters comparable to electrons' de Broglie wavelength; Use of coherent islanding growth effect in highly strained semiconductors; Observation of positions of QD peaks.
ACCESSION #
4203810

 

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