TITLE

Photocurrent multiplication in hydrogenated amorphous silicon p-i-n photodiode films

AUTHOR(S)
Sawada, Kazuaki; Mochizuki, Chichiro
PUB. DATE
September 1994
SOURCE
Applied Physics Letters;9/12/1994, Vol. 65 Issue 11, p1364
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Observes the photocurrent multiplication of hydrogenated amorphous silicon p-i-n photodiodes. Fabrication of photodiodes on a heavily doped n-type silicon substrate; Function of amorphous silicon films in various electronic fields; Impact of using plasma enhanced chemical vapor deposition system on the breakdown field of the photodiodes.
ACCESSION #
4203802

 

Related Articles

  • The Curing Behavior of Organosilicone Materials for Large-power LED Packaging. Ming-shan Yang; Ran Yan; Yuhong Yan; Yang Liu // Applied Mechanics & Materials;2014, Issue 509, p15 

    The organosilicone gel material for large-power LED packaging was prepared through Si-H addition reaction of hydrogen-silicone with vinyl-silicone catalyzed by Pt coordination compound in this paper. The curing behavior was investigated by DSC method, and the curing dynamic parameters were...

  • Influence of the orientation of the silicon substrate on the properties of avalanche Si:Er:O light-emitting structures. Sobolev, N. A.; Nikolaev, Yu. A.; Emel�yanov, A. M.; Vdovin, V. I. // Semiconductors;Jun99, Vol. 33 Issue 6, p613 

    The influence of the orientation of silicon on the structural and luminescence properties of avalanche light-emitting diodes fabricated by the coimplantation of erbium and oxygen followed by solid-phase epitaxial (SPE) crystallization of the amorphized layer is considered. The luminescence...

  • Optical and electrical properties of GaAs light emitting diodes grown on Si substrates by a... Yazawa, Y.; Minemura, T. // Applied Physics Letters;3/25/1991, Vol. 58 Issue 12, p1292 

    Studies optical and electrical properties of GaAs light-emitting diodes grown on silicon substrates by a hybrid method of molecular beam and liquid phase epitaxies. Progress on heteroepitaxy; Fabrication of light-emitting diodes.

  • Silicon is foundation for LED display. Wallace, John // Laser Focus World;Apr2000, Vol. 36 Issue 4, p15 

    Provides information on the beneficial use of silicon (Si) wafer in fabricating blue light-emitting diodes (LED) on a Si substrate. Description on the use of molecular-beam epitaxy and low-pressure metal-organic chemical-vapor deposition; Peak wavelength being emitted by the LED.

  • Silicon-based organic light-emitting diode operating at a wavelength of 1.5 μm. Curry, R. J.; Curry, R.J.; Gillin, W. P.; Gillin, W.P.; Knights, A. P.; Knights, A.P.; Gwilliam, R. // Applied Physics Letters;10/9/2000, Vol. 77 Issue 15 

    1.5-μm light-emitting diodes which operate at room temperature have been fabricated on silicon substrates. The devices use an erbium-containing organic light-emitting diode (OLED) structure which utilizes p[sup ++] silicon as the hole injection contact. The OLEDs use N,...

  • Carrier transport in porous silicon light-emitting devices. Peng, C.; Hirschman, K.D. // Journal of Applied Physics;7/1/1996, Vol. 80 Issue 1, p295 

    Studies carrier transport in light-emitting porous silicon (LEPSi) devices. Device fabrication and material characterization; Metal/LEPSi device model; Extracted LEPSi material parameters; Pn junction device model.

  • Spectroscopic identification of light emitted from defects in silicon devices. Rasras, Mahmoud S.; De Wolf, Ingrid; Groeseneken, Guido; Maes, Herman E. // Journal of Applied Physics;1/1/2001, Vol. 89 Issue 1, p249 

    A comprehensive study of different fundamental aspects of light emission from defects in Si semiconductor devices is presented. Based on an experimental analysis, using a new highly sensitive spectroscopic photon emission microscope (SPEM) for continuous wavelength analysis (2.5 eV-1.2 eV), a...

  • Hysteresis of the current-voltage characteristics of porous-silicon light-emitting structures. Laptev, A. N.; Prokaznikov, A. V.; Rud’, N. A. // Technical Physics Letters;Jun97, Vol. 23 Issue 6, p440 

    A new hysteresis effect is described in metal-porous-silicon-p-type silicon structures and a new model is proposed to describe current flow in these structures.

  • Light emission from nanocrystalline Si thin-film light emitting diodes due to tunneling carrier injection. Toyama, Toshihiko; Kotani, Yoshihiro; Okamoto, Hiroaki; Kida, Hirotsugu // Applied Physics Letters;3/23/1998, Vol. 72 Issue 12 

    Electroluminescence (EL) from nanocrystalline Si (nc-Si) has been studied by using thin-film light emitting diodes with a structure of glass/SnO[sub 2]/p-type nc-Si/Al. When positive bias voltages are applied on the SnO[sub 2] electrode, light emission from the nc-Si occurs with a peak energy of...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics