TITLE

Low-frequency noise in very high mobility modulation-doped structures

AUTHOR(S)
Phillips, J.R.; Tsubaki, K.
PUB. DATE
December 1992
SOURCE
Applied Physics Letters;12/14/1992, Vol. 61 Issue 24, p2926
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Analyzes the observation of low-frequency noise characteristics in very high mobility modulation-doped structures. Consideration of the characteristics as a function of current; Influence of mobility, change in gate voltage and injected current on noise levels; Factors influencing the development of nonlinear channel current-voltage characteristics.
ACCESSION #
4203785

 

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