Surface microroughness observed by scanning tunneling microscope and improved device

Egawa, T.; Jimbo, T.
December 1992
Applied Physics Letters;12/14/1992, Vol. 61 Issue 24, p2923
Academic Journal
Examines surface microroughness using scanning tunneling microscope. Analysis on improved device characteristics of GaAs/Si grown with AlGaAs/AlGaP intermediate layers; Advantages of growing GaAs on Si substrates; Details on dislocation densities, residual stress, lattice mismatch and thermal expansion mismatch.


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