TITLE

Surface microroughness observed by scanning tunneling microscope and improved device

AUTHOR(S)
Egawa, T.; Jimbo, T.
PUB. DATE
December 1992
SOURCE
Applied Physics Letters;12/14/1992, Vol. 61 Issue 24, p2923
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines surface microroughness using scanning tunneling microscope. Analysis on improved device characteristics of GaAs/Si grown with AlGaAs/AlGaP intermediate layers; Advantages of growing GaAs on Si substrates; Details on dislocation densities, residual stress, lattice mismatch and thermal expansion mismatch.
ACCESSION #
4203784

 

Related Articles

  • Evaluation of surface roughness of technological InP substrates by in situ scanning tunneling.... Robach, Y.; Phaner, M. // Applied Physics Letters;11/23/1992, Vol. 61 Issue 21, p2551 

    Examines the use of in situ scanning tunneling microscopy imaging in evaluating the surface roughness of technological indium phosphide (InP) substrates. Effect of InP acidic solutions on free surface; Exposure of oxide-free InP surface to rapid air reoxidation; Influence of ultraviolet native...

  • Surface roughening transition and critical layer thickness in strained-layer heteroepitaxy of.... Springholz, G.; Frank, N. // Applied Physics Letters;5/30/1994, Vol. 64 Issue 22, p2970 

    Examines the heteroepitaxial growth of lattice-mismatched EuTe on PbTe (111) by molecular beam epitaxy. Observation of a distinct surface roughening at the critical layer thickness; Increase of root mean square roughness by quantitative analysis of scanning tunneling microscopy image; Evidence...

  • Surface roughening and columnar growth of thin amorphous CuTi films. Geyer, U.; von Hulsen, U.; Thiyagarajan, P. // Applied Physics Letters;3/31/1997, Vol. 70 Issue 13, p1691 

    Investigates the surface roughening and columnar growth of thin amorphous copper titanide films. Role of scanning tunneling microscopy and small angle neutron scattering in the determination of growth stages; Details on the surface development of thin films; Relationship between column...

  • Scanning tunneling microscopy on rough surfaces: Deconvolution of constant current images. Reiss, G.; Schneider, F.; Vancea, J.; Hoffmann, H. // Applied Physics Letters;8/27/1990, Vol. 57 Issue 9, p867 

    This letter critically discusses the topographical information obtained by scanning tunneling microscopy (STM) on surfaces with a mesoscopic roughness, i.e., in the range of some nm’s. In a foregoing publication [J. Appl. Phys. 67, 1156 (1990)], we already treated the evaluation of...

  • Scanning tunneling microscopy on rough surfaces-quantitative image analysis. Reiss, G.; Brückl, H.; Vancea, J.; Lecheler, R.; Hastreiter, E. // Journal of Applied Physics;7/1/1991, Vol. 70 Issue 1, p523 

    Analyzes the application of scanning tunneling microscopy (STM) for a quantitative evaluation of roughnesses and mean island sizes of polycrystalline thin films. Main problems of STM imaging of rough surfaces; Details on the experiment; Obstacle in the evaluation of island sizes.

  • Ultra-smooth, highly ordered, thin films of La[sub 0.67]Ca[sub 0.33]MnO[sub ...d]. Vas'ko, V.A.; Nordman, C.A. // Applied Physics Letters;4/29/1996, Vol. 68 Issue 18, p2571 

    Examines growth and characterization of ultra-smooth, highly ordered, La[sub 0.67]Ca[sub 0.33]MnO[sub 3...d] thin films. Deposition of thin films by ozone-assisted, block-by-block, molecular beam epitaxy on SrTiO[sub 3] substrates; Use of scanning tunneling microscopy imaging; Analysis on...

  • Surface roughness in Cu(100)/[Co/Cu]n systems grown by ion-beam sputtering. Minvielle, Timothy J.; White, Robert L.; Wilson, Robert J. // Journal of Applied Physics;4/15/1996, Vol. 79 Issue 8, p5116 

    Deals with a study which investigated the development of surface roughness in cobalt and copper systems through the use of in situ scanning tunneling microscopy. Methods; Results; Discussion.

  • Imaging of buried phosphorus nanostructures in silicon using scanning tunneling microscopy. Oberbeck, Lars; Reusch, Thilo C. G.; Hallam, Toby; Schofield, Steven R.; Curson, Neil J.; Michelle, Y. // Applied Physics Letters;6/23/2014, Vol. 104 Issue 25, p1 

    We demonstrate the locating and imaging of single phosphorus atoms and phosphorus dopant nanostructures, buried beneath the Si(001) surface using scanning tunneling microscopy. The buried dopant nanostructures have been fabricated in a bottom-up approach using scanning tunneling microscope...

  • Surface morphological evolution during annealing of epitaxial Cu(001) layers. Purswani, J. M.; Gall, D. // Journal of Applied Physics;Aug2008, Vol. 104 Issue 4, p044305 

    Single crystal Cu(001) layers were grown on MgO(001) by ultrahigh vacuum magnetron sputtering at Ts=100 °C. Quantitative surface morphological analyses by in situ scanning tunneling microscopy show that the surfaces exhibit self-affine mound structures with a scaling exponent of 0.82±0.03...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics