Improved stability of thin cobalt disilicide films using BF[sub 2] implantation

Wang, Q.F.; Tsai, J.Y.
December 1992
Applied Physics Letters;12/14/1992, Vol. 61 Issue 24, p2920
Academic Journal
Examines factors influencing the improved stability of thin cobalt disilicide films using BF[sub 2] implantation. Analysis on the electrical characteristics of silicide films following high temperature annealing; Details on the production of most stable films; Use of scanning tunneling microscopy in analyzing silicon interface morphology.


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