TITLE

Electrical properties of Sb implanted Si[sub 1-x]Ge[sub x] alloy layers

AUTHOR(S)
Atzmon, Z.; Eizenberg, M.
PUB. DATE
December 1992
SOURCE
Applied Physics Letters;12/14/1992, Vol. 61 Issue 24, p2902
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the electrical properties of antimony (Sb) implanted Si[sub 1-x]Ge[sub x] alloy layers. Analysis on maximal values of electrical activity and mobility; Details on obtaining the highest activation efficiency at the implantation profile peak; Relevance of ion implantation in the production of semiconductor devices.
ACCESSION #
4203776

 

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