Identification of an interface defect generated by hot electrons in SiO[sub 2]

Stathis, J.H.; DiMaria, D.J.
December 1992
Applied Physics Letters;12/14/1992, Vol. 61 Issue 24, p2887
Academic Journal
Examines the identification of an interface defect component generated by hot electrons in SiO[sub 2]. Implication of hot electron in the gate dielectric of field effect transistors; Use of electrically detected magnetic resonance; Establishment of electron heating correlation with hot-electron generated interface states.


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