TITLE

Identification of an interface defect generated by hot electrons in SiO[sub 2]

AUTHOR(S)
Stathis, J.H.; DiMaria, D.J.
PUB. DATE
December 1992
SOURCE
Applied Physics Letters;12/14/1992, Vol. 61 Issue 24, p2887
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the identification of an interface defect component generated by hot electrons in SiO[sub 2]. Implication of hot electron in the gate dielectric of field effect transistors; Use of electrically detected magnetic resonance; Establishment of electron heating correlation with hot-electron generated interface states.
ACCESSION #
4203771

 

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