TITLE

Variation of the Schottky barrier height of the differently oriented CoGa on GaAs by molecular

AUTHOR(S)
Kuo, T.C.; Wang, K.L.
PUB. DATE
December 1992
SOURCE
Applied Physics Letters;12/14/1992, Vol. 61 Issue 24, p2869
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines variation of the Schottky barrier height of the differently oriented CoGa on gallium arsenide (GaAs) grown by molecular beam epitaxy. Influence of GaAs substrate growth condition on barrier formation; Fabrication of Schottky diodes with different phases of CoGa: Measurement of internal photoemission and temperature dependence of the Schottky barrier.
ACCESSION #
4203765

 

Related Articles

  • High visible rejection AlGaN photodetectors on Si(111) substrates. Pau, J. L.; Monroy, E.; Naranjo, F. B.; Mun˜oz, E.; Calle, F.; Sánchez-García, M. A.; Calleja, E. // Applied Physics Letters;5/8/2000, Vol. 76 Issue 19 

    We report on the fabrication and characterization of Schottky barrier photodetectors based on Si-doped Al[sub 0.35]Ga[sub 0.65]N layers grown on Si(111) substrates, for solar UV-band monitoring (λ<320 nm). The epilayers have been obtained by plasma-assisted molecular-beam epitaxy, showing a...

  • Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope. Miller, E. J.; Schaadt, D. M.; Yu, E. T.; Poblenz, C.; Elsass, C.; Speck, J. S. // Journal of Applied Physics;6/15/2002, Vol. 91 Issue 12, p9821 

    The characteristics of dislocation-related leakage current paths in an AlGaN/GaN heterostructure grown by molecular-beam epitaxy and their mitigation by local surface modification have been investigated using conductive atomic force microscopy. When a voltage is applied between the tip in an...

  • Al/Si/AlGaAs/GaAs Schottky barriers by molecular beam epitaxy. Miller, T.J.; Nathan, M.I. // Applied Physics Letters;11/9/1992, Vol. 61 Issue 19, p2332 

    Examines the growth of aluminum/silicon/aluminum gallium arsenide/gallium arsenide Schottky diode structures by molecular beam epitaxy. Determination of barrier height behavior as a function of aluminum mole fraction; Fabrication of aluminum dots on the surface; Effect of the conduction band...

  • Time response analysis of ZnSe-based Schottky barrier photodetectors. Monroy, E.; Vigué, F.; Calle, F.; Izpura, J. I.; Mun˜oz, E.; Faurie, J.-P. // Applied Physics Letters;10/23/2000, Vol. 77 Issue 17 

    We report on the characterization of ZnSe- and ZnMgBeSe-based Schottky barrier photodetectors grown on semi-insulating GaAs(001) by molecular-beam epitaxy. The spectral response of the devices shows a very sharp cutoff at variable wavelength, determined by the alloy composition, with a large...

  • Visible-blind ultraviolet photodetectors based on ZnMgBeSe Schottky barrier diodes. Vigué, F.; Tournié, E.; Faurie, J.-P.; Monroy, E.; Calle, F.; Mun˜oz, E. // Applied Physics Letters;6/25/2001, Vol. 78 Issue 26, p4190 

    Planar geometry Schottky barrier photodiodes designed for visible-blind ultraviolet detection have been fabricated. They are based on ZnMgBeSe alloys grown by molecular-beam epitaxy. High crystalline quality is achieved, which leads to a high responsivity (0.17 A/W at 375 nm) and a sharp cutoff...

  • The effect of growth temperature on the electrical properties of AlInAs/InP grown by molecular beam epitaxy and metal-organic chemical-vapor deposition. Luo, J. K.; Thomas, H.; Clark, S. A.; Williams, R. H. // Journal of Applied Physics;12/1/1993, Vol. 74 Issue 11, p6726 

    Discusses a study which investigated the effect of growth temperature on the electrical properties of AlInAs/InP grown by molecular beam epitaxy and metal-organic chemical vapor deposition. Techniques used for the growth of the layers on n[sup+]-InP substrates; Characteristics of the layers;...

  • On the Richardson constant for aluminum/gallium arsenide Schottky diodes. Missous, M.; Rhoderick, E. H. // Journal of Applied Physics;5/15/1991, Vol. 69 Issue 10, p7142 

    Presents a study which measured the Richardson constant for aluminum/gallium arsenide Schottky diodes in which the aluminum is deposited epitaxially by molecular beam epitaxy. Experimental details; Temperature variation for the barrier height; Discussion and conclusions.

  • Unpinned GaAs Schottky barriers with an epitaxial silicon layer. Costa, J. C.; Miller, T. J.; Williamson, F.; Nathan, M. I. // Journal of Applied Physics;8/15/1991, Vol. 70 Issue 4, p2173 

    Offers information on a study which examined aluminum/n- and aluminum/p-type Schottky barrier structures grown in situ by molecular-beam epitaxy with thin silicon epitaxial interfacial layers. Theoretical background; Methodology; Results and discussion.

  • Controlled low barrier height n+-InGaAs/n-GaAs pseudomorphic heterojunction Schottky diodes. Kleinsasser, A. W.; Woodall, J. M.; Pettit, G. D.; Jackson, T. N.; Tang, J. Y.-F.; Kirchner, P. D. // Applied Physics Letters;6/15/1985, Vol. 46 Issue 12, p1168 

    Heterojunction Schottky barrier diodes, in which a pseudomorphic layer of n+-InGaAs played the role of a metal contacting n-GaAs, were grown by molecular beam epitaxy. The junctions had low barrier heights (30–150 meV) which could be controlled by composition and doping of the n+ layer....

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics