TITLE

Quasistatic and high frequency capacitance-voltage characterization of Ga[sub 2]O[sub 3]-GaAs

AUTHOR(S)
Passlack, M.; Hong, M.
PUB. DATE
February 1996
SOURCE
Applied Physics Letters;2/19/1996, Vol. 68 Issue 8, p1099
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the making of Ga[sub 2]O[sub 3]-GaAs interface using in situ molecular beam epitaxy. Fabrication of metal-insulator-semiconductor structures using shadow mask process; Derivation of interface density through the high frequency technique; Discussion of the charge trapping phenomena.
ACCESSION #
4198944

 

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