Quasistatic and high frequency capacitance-voltage characterization of Ga[sub 2]O[sub 3]-GaAs

Passlack, M.; Hong, M.
February 1996
Applied Physics Letters;2/19/1996, Vol. 68 Issue 8, p1099
Academic Journal
Investigates the making of Ga[sub 2]O[sub 3]-GaAs interface using in situ molecular beam epitaxy. Fabrication of metal-insulator-semiconductor structures using shadow mask process; Derivation of interface density through the high frequency technique; Discussion of the charge trapping phenomena.


Related Articles

  • Photoluminescence spectroscopy of nearly defect-free InN microcrystals exhibiting nondegenerate semiconductor behaviors. Hsiao, Ching-Lien; Hsu, Hsu-Cheng; Chen, Li-Chyong; Wu, Chien-Ting; Chen, Chun-Wei; Chen, Min; Tu, Li-Wei; Chen, Kuei-Hsien // Applied Physics Letters;10/29/2007, Vol. 91 Issue 18, p181912 

    Nearly defect-free InN microcrystals grown on Si(111) substrates have been realized by plasma-assisted molecular beam epitaxy. High-resolution transmission electron microscope images reveal that these microcrystals exhibit single-crystalline wurtzite structure. Low temperature photoluminescence...

  • Epitaxial growth of VO2 by periodic annealing. Tashman, J. W.; Lee, J. H.; Paik, H.; Moyer, J. A.; Misra, R.; Mundy, J. A.; Spila, T.; Merz, T. A.; Schubert, J.; Muller, D. A.; Schiffer, P.; Schlom, D. G. // Applied Physics Letters;2/10/2014, Vol. 104 Issue 6, p063104-1 

    We report the growth of ultrathin VO2 films on rutile TiO2 (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO2 via solid-phase epitaxy. Significant metal-insulator...

  • Evidence of the metal-insulator transition in ultrathin unstrained V2O3 thin films. Dillemans, L.; Smets, T.; Lieten, R. R.; Menghini, M.; Su, C.-Y.; Locquet, J.-P. // Applied Physics Letters;2/17/2014, Vol. 104 Issue 7, p071902-1 

    We report the strain state and transport properties of V2O3 layers and V2O3/Cr2O3 bilayers deposited by molecular beam epitaxy on (0001)-Al2O3. By changing the layer on top of which V2O3 is grown, we change the lattice parameters of ultrathin V2O3 films significantly. We find that the...

  • Topological insulators: Strain away. Jia, Jinfeng // Nature Physics;Apr2014, Vol. 10 Issue 4, p247 

    The article discusses the topological surface states, being the feature of topological insulator, and mentions the effect of strain on topological surface states. Topics discussed include three-dimensional topological insulator which was grown by molecular beam epitaxy, showed strain effects on...

  • Transport properties of ultra-thin VO2 films on (001) TiO2 grown by reactive molecular-beam epitaxy. Hanjong Paik; Moyer, Jarrett A.; Spila, Timothy; Tashman, Joshua W.; Mundy, Julia A.; Freeman, Eugene; Shukla, Nikhil; Lapano, Jason M.; Engel-Herbert, Roman; Zander, Willi; Schubert, Jürgen; Muller, David A.; Datta, Suman; Schiffer, Peter; Schlom, Darrell G. // Applied Physics Letters;10/19/2015, Vol. 107 Issue 16, p1 

    We report the growth of (001)-oriented VO2 films as thin as 1.5 nm with abrupt and reproducible metal-insulator transitions (MIT) without a capping layer. Limitations to the growth of thinner films with sharp MITs are discussed, including the Volmer-Weber type growth mode due to the high energy...

  • Influence of anisotropic strain relaxation on the magnetoresistance properties of epitaxial Fe3O4 (110) films. Sofin, R. G. S.; Han-Chun Wu; Ramos, R.; Arora, S. K.; Shvets, I. V. // Journal of Applied Physics;2015, Vol. 118 Issue 18, p173903-1 

    We studied Fe3O4 (110) films grown epitaxially on MgO (110) substrates using oxygen plasma assisted molecular beam epitaxy. The films with thickness of 30-200 nm showed anisotropic in-plane partial strain relaxation. Magneto resistance (MR) measurements with current and magnetic field along...

  • Vacancy ordering of Ga[sub 2]Se[sub 3] at GaSe/GaAs(100) interface. Dai, Z. R.; Ohuchi, F. S. // Applied Physics Letters;8/17/1998, Vol. 73 Issue 7 

    Vacancy ordering was directly observed by high resolution transmission electron microscopy (HRTEM) at the heterointerface of GaSe/GaAs(100) grown by molecular beam epitaxy. Ga[sub 2]Se[sub 3] crystalline film forms immediately to the GaAs (100) substrate, acting as an intermediate layer with...

  • Crystal orientation of GaAs islands grown on SrTiO3 (001) by molecular beam epitaxy. Largeau, L.; Cheng, J.; Regreny, P.; Patriarche, G.; Benamrouche, A.; Robach, Y.; Gendry, M.; Hollinger, G.; Saint-Girons, G. // Applied Physics Letters;7/6/2009, Vol. 95 Issue 1, p011907 

    The growth of GaAs islands on (001)-oriented SrTiO3 (STO) substrates by molecular beam epitaxy is studied. A competition between (111)- and (001)-oriented islands takes place. It is shown that this competition is driven by the interface energy and the critical nucleation volume of the GaAs/STO...

  • Influence of ambient atmosphere on metal-insulator transition of strained vanadium dioxide ultrathin films. Nagashima, Kazuki; Yanagida, Takeshi; Tanaka, Hidekazu; Kawai, Tomoji // Journal of Applied Physics;9/15/2006, Vol. 100 Issue 6, p063714 

    The effect of ambient atmosphere on metal-to-insulator transition (MIT) in strained vanadium dioxide (VO2) ultrathin films (7–8 nm) grown epitaxially on TiO2 (001) single crystal substrate by pulsed laser deposition was investigated by varying the ambient oxygen pressure and substrate...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics