Interface inequivalence of the InP/InAlAs/InP staggered double heterostructure grown by

Bohrer, J.; Krost, A.
February 1996
Applied Physics Letters;2/19/1996, Vol. 68 Issue 8, p1072
Academic Journal
Presents the characteristics of normal InAlAs on InP and inverted InP on InAlAs interface developed by metalorganic chemical vapor deposition. Employment of transmission electron microscopy for comparison; Dissimilarities noted at both interfaces; Measurement of luminescence using a cooled Ge detector and standard lock-in amplifier.


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