TITLE

Kinetics of nucleation and growth of Si on SiO[sub 2] in very low pressure SiH[sub 4] chemical

AUTHOR(S)
Dana, S.S.; Liehr, M.
PUB. DATE
December 1992
SOURCE
Applied Physics Letters;12/21/1992, Vol. 61 Issue 25, p3035
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the kinetics of nucleation and growth of silicon (Si) on silicon dioxide in very low pressure silicon hydrogen[sub 4] chemical vapor deposition (CVD). Use of rapid thermal ultrahigh vacuum-CVD; Titration of exposed Si surface using hydrogen gas thermal desorption spectroscopy; Characteristics of surface reactions at low pressure CVD.
ACCESSION #
4198863

 

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