TITLE

# Change in bonding properties of amorphous hydrogenated silicon-carbide layers prepared with

AUTHOR(S)
Folsch, J.; Rubel, H.
PUB. DATE
December 1992
SOURCE
Applied Physics Letters;12/21/1992, Vol. 61 Issue 25, p3029
SOURCE TYPE
DOC. TYPE
Article
ABSTRACT
Investigates the bonding properties of amorphous hydrogenated silicon carbide (SiC:H) layers prepared with different gases as carbon sources. Deposition of amorphous-SiC:H in radiofrequency glow discharge; Determination of hydrogen content by elastic recoil detection analysis; Dependence of methyl group concentration on silicon-carbon bonds.
ACCESSION #
4198861

## Related Articles

• Topology of charge density and elastic anisotropy of Ti3SiC2 polymorphs. Yu, R.; Zhang, X. F.; He, L. L.; Ye, H. Q. // Journal of Materials Research;May2005, Vol. 20 Issue 5, p1180

Using an all-electron, full potential first-principles method, we have investigated the topology of charge density and elastic anisotropy of Ti3SiC2 polymorphs comparatively. By analyzing the charge density topology, it was found that the Ti-Si bonds are weaker in Î² than in Î±, resulting in...

• On the calculation of spontaneous polarization of the 2 H-SiC polytype. Davydov, S. Yu. // Physics of the Solid State;Aug2006, Vol. 48 Issue 8, p1491

An expression for the dipole moment of the tetrahedral bond is derived for the hexagonal 2 H-SiC polytype within the Harrison bond-orbital model. The polarization calculated from this expression is in satisfactory agreement with the results of earlier pseudopotential calculations.

• First-principles study on electronic properties of SiC nanoribbon. Jian-Min Zhang; Fang-Ling Zheng; Yan Zhang; Ji, Vincent // Journal of Materials Science;Jun2010, Vol. 45 Issue 12, p3259

Under the generalized gradient approximation (GGA), the electronic properties are studied for SiC nanoribbon with zigzag edge (ZSiCNR) and armchair edge (ASiCNR) by using the first-principles projector-augmented wave (PAW) potential within the density function theory (DFT) framework. Distinct...

• Structural features of a carbon plastic material infiltrated with molten silicon. Garshin, A.; Kurnukin, V.; Kulik, V.; Nilov, A. // Refractories & Industrial Ceramics;Nov2005, Vol. 46 Issue 6, p419

The structure of a SiCâ€”C composite prepared from carbon plastic plates infiltrated with molten silicon and hot-pressed organic bond composed of a ten-layer package of LU-24P unidirectional carbon tape is studied. A technology for giving a fibrous structure to Si-impregnated carbon plastic...

• Ab Initio Modeling of Interatomic Interactions in 3C—SiC:M, M = Cr, Mn, Fe, Co. Yurieva, É. I. // Journal of Structural Chemistry;Mar/Apr2004, Vol. 45 Issue 2, p194

The electronic structure and chemical binding parameters of impurity atoms M = Cr, Mn, Fe, Co in cubic silicon carbide are considered in DFT (density functional theory) and $X_\left\{\alpha\right\}$-DV (discrete variation) approximations. A scheme for calculating the binding energies in the...

• Breaking bonds with the left eigenstate completely renormalized coupled-cluster method. Yingbin Ge; Gordon, Mark S.; Piecuch, Piotr // Journal of Chemical Physics;11/7/2007, Vol. 127 Issue 17, p174106

The recently developed [P. Piecuch and M. Wloch, J. Chem. Phys. 123, 224105 (2005)] size-extensive left eigenstate completely renormalized (CR) coupled-cluster (CC) singles (S), doubles (D), and noniterative triples (T) approach, termed CR-CC(2,3) and abbreviated in this paper as CCL, is...

• Competing atomic and molecular mechanisms of thermal oxidation-SiC versus Si. Shen, Xiao; Tuttle, Blair R.; Pantelides, Sokrates T. // Journal of Applied Physics;Jul2013, Vol. 114 Issue 3, p033522

Oxidation is widely used to fabricate complex materials and structures, controlling the properties of both the oxide and its interfaces. It is commonly assumed that the majority diffusing species in the oxide is the dominant oxidant, as is for Si oxidation. It is not possible, however, to...

• Effect of resin infiltration on fumed silica-based thermal insulations. Kim, Ki-Tae; Kim, Yun-Il; Park, Sung; Lee, Hae-Weon; Lee, Dong-Bok; Lee, Jae // Research on Chemical Intermediates;2010, Vol. 36 Issue 6/7, p647

The thermal conductivities and the strengths of fumed silica-based thermal insulations prepared by the dry process and the resin infiltration method have been studied. Infiltration of the insulation samples prepared by dry processing of mixtures, consisting of fumed silica, ceramic fiber and a...

• Microstructural features of Al-implanted 4H-SiC. Wang, C. M.; Zhang, Y.; Weber, W. J.; Jiang, W.; Thomas, L. E. // Journal of Materials Research;Apr2003, Vol. 18 Issue 4, p772

Examines the microstructural features of highly damaged 4H-silicon carbide (SiC) implanted with Al[sub2]²+; ions, using transmission electron microscopy and electron energy-loss spectroscopy. Properties of SiC; Applications for SiC; Factors that led to the complete amorphization of SiC;...

Share