Change in bonding properties of amorphous hydrogenated silicon-carbide layers prepared with

Folsch, J.; Rubel, H.
December 1992
Applied Physics Letters;12/21/1992, Vol. 61 Issue 25, p3029
Academic Journal
Investigates the bonding properties of amorphous hydrogenated silicon carbide (SiC:H) layers prepared with different gases as carbon sources. Deposition of amorphous-SiC:H in radiofrequency glow discharge; Determination of hydrogen content by elastic recoil detection analysis; Dependence of methyl group concentration on silicon-carbon bonds.


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