High-temperature stable MoAl[sub 2.7]/n-GaAs Schottky diodes with enhanced barrier height

Huang, T.S.; Peng, J.G.
December 1992
Applied Physics Letters;12/21/1992, Vol. 61 Issue 25, p3017
Academic Journal
Describes the high-temperature stable molybdenum aluminum[sub 2.7] and n-gallium arsenide (GaAs) Schottky diode with enhanced barrier height. Requirement for metal-semiconductor field effect transistor device processing; Benefits of high Schottky barrier height for GaAs digital logic circuit; Characteristics of the interface at the annealed contact.


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