TITLE

Electron-beam-assisted dry etching for GaAs using electron cyclotron resonance plasma electron

AUTHOR(S)
Watanabe, Heiji; Matsui, Shinji
PUB. DATE
December 1992
SOURCE
Applied Physics Letters;12/21/1992, Vol. 61 Issue 25, p3011
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Develops an electron-beam (EB)-assisted dry etching technique for gallium arsenide. Use of argon electron cyclotron resonance plasma as an electron shower source; Dependence of ion beam and EB current density on acceleration voltage and polarity; Results of photoluminescence measurement; Effectiveness of the technique for damage layer removal.
ACCESSION #
4198855

 

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