Electron-beam-assisted dry etching for GaAs using electron cyclotron resonance plasma electron

Watanabe, Heiji; Matsui, Shinji
December 1992
Applied Physics Letters;12/21/1992, Vol. 61 Issue 25, p3011
Academic Journal
Develops an electron-beam (EB)-assisted dry etching technique for gallium arsenide. Use of argon electron cyclotron resonance plasma as an electron shower source; Dependence of ion beam and EB current density on acceleration voltage and polarity; Results of photoluminescence measurement; Effectiveness of the technique for damage layer removal.


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