Evidence for donor-gallium vacancy pairs in silicon doped GaAs grown by molecular beam epitaxy

McQuaid, S.A.; Newman, R.C.
December 1992
Applied Physics Letters;12/21/1992, Vol. 61 Issue 25, p3008
Academic Journal
Explores the evidence for the presence of donor-gallium vacancy pair in silicon (Si) doped gallium arsenide (GaAs) grown at low temperature. Growth of GaAs by molecular beam epitaxy; Incorporation of Si on Ga sites during epitaxial growth of GaAs; Measurement of infrared absorption due to vibrational modes of Si impurities.


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