Amorphization processes in ion implanted Si: Ion species effects

Motooka, T.; Holland, O.W.
December 1992
Applied Physics Letters;12/21/1992, Vol. 61 Issue 25, p3005
Academic Journal
Investigates the amorphization processes in ion implanted silicon. Use of Raman spectroscopy and Rutherford backscattering spectrometry; Calculation of initial damage distribution during ion implantation by Monte Carlo simulation; Dependence of crystal silicon Raman peak on ion dose; Control of amorphization by divacancy generated by ion bombardment.


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