TITLE

Amorphization processes in ion implanted Si: Ion species effects

AUTHOR(S)
Motooka, T.; Holland, O.W.
PUB. DATE
December 1992
SOURCE
Applied Physics Letters;12/21/1992, Vol. 61 Issue 25, p3005
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the amorphization processes in ion implanted silicon. Use of Raman spectroscopy and Rutherford backscattering spectrometry; Calculation of initial damage distribution during ion implantation by Monte Carlo simulation; Dependence of crystal silicon Raman peak on ion dose; Control of amorphization by divacancy generated by ion bombardment.
ACCESSION #
4198853

 

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