TITLE

Donor neutralization in GaAs after plasma silicon nitride deposition

AUTHOR(S)
Seaward, K.L.
PUB. DATE
December 1992
SOURCE
Applied Physics Letters;12/21/1992, Vol. 61 Issue 25, p3002
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Describes the donor neutralization of silicon nitrides on gallium nitride after plasma-enhanced chemical vapor deposition. Measurement of loss of sheet conductance after plasma deposition; Association of electrical change with formation of hydrogen-silicon complex; Characteristics of hydrogen-silicon complex dissociation; Presence of hydrogen in the test structure.
ACCESSION #
4198852

 

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