Microwave oscillation in InAs p-n junctions

Kamakura, Katsutoshi
December 1992
Applied Physics Letters;12/21/1992, Vol. 61 Issue 25, p2999
Academic Journal
Observes continuous coherent microwave oscillation in indium arsenide (InAs) p-n junctions. Application of direct current reverse bias voltage and external magnetic field in region of avalanche breakdown; Fabrication of p-n junction by liquid phase epitaxy; Electrical characteristics of InAs junction; Relation between oscillation frequency and sample current.


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