TITLE

Si nanowire growth with ultrahigh vacuum scanning tunneling microscopy

AUTHOR(S)
Ono, Takahito; Saitoh, Hiroaki
PUB. DATE
April 1997
SOURCE
Applied Physics Letters;4/7/1997, Vol. 70 Issue 14, p1852
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Details the growth of silicon (Si) nanowires by applying a voltage of a constant current between Si substrate and a gold scanning tunneling microscope tip. Deposition of silicon atoms into a gold tip by field evaporation; Activation of the field evaporation rate of silicon atoms; Importance of the presence of gold atoms for silicon growth.
ACCESSION #
4190001

 

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