TITLE

Superlattice band structure probed by tunneling hot-electron injection

AUTHOR(S)
Kuan, C.H.; Tsui, D.C.
PUB. DATE
July 1992
SOURCE
Applied Physics Letters;7/27/1992, Vol. 61 Issue 4, p456
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the superlattice band structure by tunneling hot-electron injection. Effect of magnetic field on the injection energy of the hot electrons; Suitability of the Gaussian hot-electron distribution for the infrared detector samples; Significance of the inhomogeneous broadening on the devices.
ACCESSION #
4189782

 

Related Articles

  • High field electron dynamics in dilute nitride Ga(AsN). Spasov, S.; Allison, G.; Patanè, A.; Eaves, L.; Tretyakov, M. Yu.; Ignatov, A.; Hopkinson, M.; Hill, G. // Applied Physics Letters;7/14/2008, Vol. 93 Issue 2, p022111 

    We investigate the high electric field dynamics of conduction electrons in dilute nitride GaAs1-xNx diodes. At low temperature (T<40 K), we show that the trapping of hot electrons at localized states leads to low frequency oscillations (<1 Hz) of the current at high bias. This slow dynamics is...

  • Surface states on the n-InN-electrolyte interface. Gutkin, A. A.; Rudinsky, M. É.; Brunkov, P. N.; Klochikhin, A. A.; Davydov, V. Yu.; Chen, H.-Y.; Gwo, S. // Semiconductors;Dec2008, Vol. 42 Issue 12, p1416 

    Dependences of differential capacitance of the electrolyte- n-InN (0001) contact on the bias voltage are studied. Their analysis of the basis of a model similar to a model of the MIS structure shows that the energy spectrum of surface states of InN above the conduction band bottom can be...

  • The effects of spatial frequency on binocular fusion: From elementary to complex images. Roumes, Corinne; Plantier, Justin // Human Factors;Sep1997, Vol. 39 Issue 3, p359 

    Presents a study on factors limiting binocular fusion using two-dimensional difference of Gaussian (2D-DOG) stimuli. Determination of the proportion of fused stimuli and observer's response time; Luminance profile of a two-dimensional DOG.

  • Experimental determination of the N-p-partial density of states in the conduction band of GaN:... Katsikini, M.; Paloura, E.C.; Moustakas, T. D. // Journal of Applied Physics;2/1/1998, Vol. 83 Issue 3, p1437 

    Presents a study which investigated the N-p-partial density of states in the conduction band of GaN. What is GaN; Values of the direct band gap of GaN; Experimental conditions; Results of this study.

  • Dynamics of injected electron cooling in GaAs. Hayes, J. R.; Levi, A. F. J.; Weigmann, W. // Applied Physics Letters;5/19/1986, Vol. 48 Issue 20, p1365 

    Using the technique of hot-electron spectroscopy we have measured the change in hot-electron spectra with transit region width enabling us to obtain a dynamic picture of injected hot-electron cooling in n+ GaAs. All features in the spectra have been identified and...

  • Hot-electron flow in an inhomogeneous field. Artaki, Michael // Applied Physics Letters;1/11/1988, Vol. 52 Issue 2, p141 

    The drift velocity for hot electrons is expected to depend on the gradient of an inhomogeneous field, dF/dx, through a term proportional to a phenomenological length constant. Estimates suggest that the field gradient effect can be significant in short channel devices. Monte Carlo calculations...

  • Hot-electron transport in a graded band-gap base heterojunction bipolar transistor. Hayes, J. R.; Harbison, J. P. // Applied Physics Letters;8/8/1988, Vol. 53 Issue 6, p490 

    In this letter we report the direct observation of electron heating in an electric field using hot-electron spectroscopy. The device structure used for the study was a graded band-gap base heterojunction bipolar transistor, fabricated in the GaAs/AlGaAs semiconductor alloy system. A thermal...

  • Pseudomorphic InGaAs base ballistic hot-electron device. Seo, K.; Heiblum, M.; Knoedler, C. M.; Hong, W-P.; Bhattacharya, P. // Applied Physics Letters;11/14/1988, Vol. 53 Issue 20, p1946 

    We report the first successful incorporation of a pseudomorphic InGaAs base in a ballistic hot-electron device. The device, with a 28-nm-thick In0.15Ga0.85As base, had a collector-base breakdown voltage of 0.55 V and a maximum current transfer ratio of 0.89 at 4.2 K, considerably higher than the...

  • Generation�Recombination Processes in Semiconductors. Volovichev, I. N.; Gurevich, Yu. G. // Semiconductors;Mar2001, Vol. 35 Issue 3, p306 

    A unified methodical approach to investigate the transport phenomena in semiconductors is formulated. Various recombination models used in studying the transport phenomena and the establishment of equilibrium in semiconductor structures are analyzed. New expressions describing the recombination...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics