TITLE

Improvement of punchthrough-induced gate-oxide breakdown in n-channel metal-oxide-semiconductor

AUTHOR(S)
Huang, M.Q.; Lai, P.T.
PUB. DATE
July 1992
SOURCE
Applied Physics Letters;7/27/1992, Vol. 61 Issue 4, p453
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the gate-electric breakdown in small n-channel metal-oxide-semiconductor field-effect transistors. Acceleration of the breakdown; Effect of the rapid thermal nitridation of the gate oxide in the transistors; Increase of the charge to the breakdown.
ACCESSION #
4189781

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics