TITLE

Rapid thermal annealing and the anomalous threshold voltage shift of metal-oxide-semiconductor

AUTHOR(S)
Fang, Y.K.; Hsieh, J.C.
PUB. DATE
July 1992
SOURCE
Applied Physics Letters;7/27/1992, Vol. 61 Issue 4, p447
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the threshold voltage shift between P-channel metal-oxide-semiconductor field effect transistor (P-MOSFET) and N-channel MOSFET. Use of high temperature rapid thermal annealing borophosphosilicate glass reflow; Application of polygate complimentary MOS technology.
ACCESSION #
4189779

 

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