In situ electron beam patterning for GaAs using electron-cyclotron-resonance plasma-formed oxide

Kohmoto, S.; Takado, N.
July 1992
Applied Physics Letters;7/27/1992, Vol. 61 Issue 4, p444
Academic Journal
Develops an in situ fabrication process for gallium arsenide. Use of electron-cyclotron-resonance oxygen plasma; Formation of an oxide mask for chlorine gas etching; Reduction of time and oxygen gas pressure required for oxidation; Creation of line patterns with submicron width.


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