TITLE

Molecular beam epitaxy growth interrupt and temperature studies on doped and undoped single

AUTHOR(S)
Miller, B.A.; Kirby, P.B.
PUB. DATE
July 1992
SOURCE
Applied Physics Letters;7/27/1992, Vol. 61 Issue 4, p432
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the changes in the transport properties of electrons in modulation doped gallium arsenide/indium gallium arsenide/aluminum gallium arsenide quantum well structures. Discussion of growth interruptions at the interface; Influence of aluminum disorder on aluminum gallium arsenide; Factors affecting changes in carrier mobilities.
ACCESSION #
4189774

 

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