TITLE

Point source heating effects in multiple quantum well modulators

AUTHOR(S)
Sizer II, T.; LaMarche, R.E.
PUB. DATE
July 1992
SOURCE
Applied Physics Letters;7/27/1992, Vol. 61 Issue 4, p420
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the effects of point source heating on multiple quantum well modulators. Result of using small devices with small optical spots; Application of a reverse bias field; Limitation of the maximum data rate of optical interconnection system.
ACCESSION #
4189770

 

Related Articles

  • Al[sub x]Ga[sub 1-x]As-AlAs quantum well surface-normal electroabsorption modulators operating.... Goossen, K.W.; Yan, R.H.; Cunningham, J.E.; Jan, W.Y. // Applied Physics Letters;10/7/1991, Vol. 59 Issue 15, p1829 

    Evaluates Al[sub x]Ga[sub 1-x]As-aluminum arsenide quantum well surface-normal electroabsorption modulators. Operation of modulators at visible wavelengths; Advantage of modulators over lasers; Measurement of relative transmission changes.

  • Self-consistent calculation of the modulation response for quantum well laser diodes. Grupen, Matt; Hess, Karl // Applied Physics Letters;11/7/1994, Vol. 65 Issue 19, p2454 

    Presents the modulation responses for a set of strained-layer InGaAs quantum well lasers as calculated by a version of minilase. Association of gain saturation and low frequency rolloff with carrier capture in the quantum well; Influence of the capture rates on the modulation response.

  • Normally on GaAs/AlAs multiple-quantum well Fabry-Perot transmission modulator with ON/OFF.... Chih-Hsiang Lin; Goossen, K.W. // Applied Physics Letters;3/6/1995, Vol. 66 Issue 10, p1222 

    Investigates a multiple-quantum well Fabry-Perot (FP MQW) transmission modulator. Changes of the ON/OFF transmittance in transmission modulators; Comparison between transmittance charges of several transmission modulators; Derivation of the FP resonant wavelength transmittance from FP...

  • Infrared electro-optical modulators based on field-induced...-L intervalley transfer. Meyer, J.R.; Hoffman, C.A. // Applied Physics Letters;11/6/1995, Vol. 67 Issue 19, p2756 

    Examines the electro-optical modulators based on intersubband transitions induced by normal incidence radiation in GaSb-AlSb-family asymmetric double quantum wells. Discussion on the electro-optical modulator; Effectiveness of the applied field; Alteration of the selection rules, resonance...

  • Multiquantum well structure with an average electron mobility of 4.0x10[sup 6] cm[sup 2]/V s. Pfeiffer, L.N.; West, K.W. // Applied Physics Letters;9/7/1992, Vol. 61 Issue 10, p1211 

    Presents a modulation-doped multiquantum well structure which suppresses the usual ambient light effect associated with modulation doping. Measurement of the low field mobility of each well; Charge distribution of the carriers in each well; Reduction of the remote ionized scattering from the...

  • Measurement of modulation saturation intensity in strain-balanced, undefected InGaAs/GaAsP.... Goossen, K.W.; Cunningham, J.E.; Santos, M.B.; Jan, W.Y. // Applied Physics Letters;7/26/1993, Vol. 63 Issue 4, p515 

    Measures the modulation saturation intensity in strained-balanced indium gallium arsenide/gallium arsenide phosphide (InGaAs/GaAsP) multiple quantum well (MQW) modulators. Comparison with strain-relaxed system in terms of exciton and modulation; Growth of sample by gas-source molecular beam...

  • Theoretical and experimental analysis of Mach–Zehnder quantum-well modulators. Bardyszewski, Witold; Yevick, David; Liu, Yong; Rolland, Claude; Bradshaw, Scott // Journal of Applied Physics;7/15/1996, Vol. 80 Issue 2, p1136 

    Presents a theoretical and experimental analysis of Mach-Zehnder quantum-well modulators. Description of the theoretical model; Experimental procedures; Theoretical and experimental results.

  • Strained InGaAsP/InGaAsP/InAsP multi-quantum well structure for polarization insensitive electroabsorption modulator with high power saturation. Ougazzaden, A.; Devaux, F. // Applied Physics Letters;12/30/1996, Vol. 69 Issue 27, p4131 

    In this study we report a novel strained InGaAsP/InGaAsP/InAsP multiquantum well structure for electroabsorption modulators giving high power saturation together with polarization insensitivity. A careful design of the structure in terms of band-gap engineering has been performed to fulfil both...

  • Quantum-well optical modulator at terahertz frequencies. Maslov, A. V.; Citrin, D. S. // Journal of Applied Physics;6/15/2003, Vol. 93 Issue 12, p10131 

    We predict that strong modulation of the optical properties of quantum wells at terahertz frequencies is possible. In this regime, the coherent nonlinear mixing of the optical and the terahertz-modulation fields leads to strong modification of the frequency dependence of the modulation depth.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics