Technique for lateral temperature profiling in optoelectronic devices using a photoluminescence

Hall, D.C.; Goldberg, L.
July 1992
Applied Physics Letters;7/27/1992, Vol. 61 Issue 4, p384
Academic Journal
Examines the lateral temperature profiles in gallium arsenide-based optoelectronic devices. Use of a photoluminescence microprobe technique; Determination of the effective focal length of the thermally induced refractive index gradient lens; Inadequacy of the Raman method.


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