TITLE

Technique for lateral temperature profiling in optoelectronic devices using a photoluminescence

AUTHOR(S)
Hall, D.C.; Goldberg, L.
PUB. DATE
July 1992
SOURCE
Applied Physics Letters;7/27/1992, Vol. 61 Issue 4, p384
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the lateral temperature profiles in gallium arsenide-based optoelectronic devices. Use of a photoluminescence microprobe technique; Determination of the effective focal length of the thermally induced refractive index gradient lens; Inadequacy of the Raman method.
ACCESSION #
4189759

 

Related Articles

  • High resistivity and picosecond carrier lifetime of GaAs implanted with MeV Ga ions at high.... Jagadish, C.; Tan, H.H. // Applied Physics Letters;9/18/1995, Vol. 67 Issue 12, p1724 

    Investigates high resistivity and picosecond carrier lifetime of gallium arsenide (GaAs) implanted with megaelectronVolt gallium ions at high fluences. Strain field exhibited by the implanted samples; Effects of annealing the samples at the temperature of 600 degrees Celsius; Optoelectronic...

  • High-speed, optically controlled surface-normal optical switch based on diffusive conduction. Yairi, M.B.; Coldren, C.W.; Miller, D.A.B.; Harris Jr., J.S. // Applied Physics Letters;8/2/1999, Vol. 75 Issue 5, p597 

    Reports on a surface-normal optically controlled optoelectronic modulator made from a reversed biased p-i (multiple quantum well)-n GaAs/AlGaAs structure with ultrathin barriers whose recovery time is based on diffusive conduction. Demonstration of modulation of reflectivity; Modulated changes...

  • Light-emitting diodes based on a metal-insulator-semiconductor structure. Katok, V. B.; Panfilov, M. I.; Chaıka, G. E. // Semiconductors;Jun97, Vol. 31 Issue 6, p593 

    Focuses on the possibility of using the free electrons present in a solid to vary the refractive index of gallium arsenide. Regulation of the real part of the refractive index using electro-optic effect; Formation of light-guiding layers in free-carrier effective mass.

  • Direct measurement of dispersive optical nonlinearities in GaAs using the photoreflectance method. Wang, Chun; Zhang, Chunping; Zhang, Guangyin // Journal of Applied Physics;11/1/1990, Vol. 68 Issue 9, p4897 

    Presents a study that obtained nonlinear refractive index changes for the wavelengths near the fundamental edge in an ultrapure epitaxial layer gallium arsenide by the photoreflectance method. Electric field effect for pump intensities; Effect of plasma screening; Band filling effect for pump...

  • Variation of refractive index in strained InxGa1-xAs-GaAs heterostructures. Das, Utpal; Bhattacharya, Pallab K. // Journal of Applied Physics;7/1/1985, Vol. 58 Issue 1, p341 

    Presents a study that examined the refractive index in In[subx]Ga[sub1-x]-gallium arsenide heterostructures and strained-layer superlattices. Analysis of the variation in the refrative index of the heterostructure; Development of a model for the calculation of the refractive index change in the...

  • Photosensitivity of GaAlAs/GaAs heterophotoelements in linearly polarized light. Rud�, V. Yu.; Rud�, Yu. V.; Khvostikov, V. P. // Semiconductors;Jun99, Vol. 33 Issue 6, p689 

    The polarization photosensitivity of two types of GaAlAs/GaAs heterophotoelements has been investigated. It has been shown that in heterophotoelements without an antireflection coating the induced photopleochroism is governed by optical processes at the air-GaAlAs surface boundary, and the...

  • Optically enhanced defect reactions in semi-insulating bulk GaAs. Jiménez, J.; González, M. A.; Hernández, P.; de Saja, J. A.; Bonnafé, J. // Journal of Applied Physics;2/15/1985, Vol. 57 Issue 4, p1152 

    Discusses a study that investigated a photomemory effect in the photocurrent of semi-insulating gallium arsenide (GaAs) when illuminated with photons. Information on relevant photoelectronic properties of GaAs; Description of samples and experimental features; Experimental results concerning...

  • SiGe waveguides offer fiberoptic solutions. Holton, W. Conard // Laser Focus World;Mar99, Vol. 35 Issue 3, p28 

    Presents information on the use of silicon germanium (SiGe) in silicon-compatible optoelectronic devices. Advantages and disadvantages; Results of a study on the index of refraction for pseudomorphic SiGe epilayers; Waveguides created with SiGe layers beyond the measured critical thickness for...

  • Direct measurement of dispersive nonlinearities in GaAs. Lee, Y. H.; Chavez-Pirson, A.; Rhee, B. K.; Gibbs, H. M.; Gossard, A. C.; Wiegmann, W. // Applied Physics Letters;12/1/1986, Vol. 49 Issue 22, p1505 

    Nonlinear refractive index changes in 299 Å multiple quantum well GaAs were obtained directly by measuring Fabry–Perot transmission peak shifts. These changes crosscheck those obtained by Kramers–Kronig transformations of the nonlinear absorption under identical pumping...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics