TITLE

Deposition of polycrystalline beta-SiC films on Si substrates at room temperature

AUTHOR(S)
Kuan-Lun Cheng; Huang-Chung Cheng
PUB. DATE
January 1997
SOURCE
Applied Physics Letters;1/13/1997, Vol. 70 Issue 2, p223
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the deposition of polycrystalline beta-silicon carbide films on silicon substrates at room temperature by electron cyclotron resonance chemical vapor deposition. Parameters used to lower deposition temperature; Determination of grain size and plasma-induced defects; Suppression of substrate damage with the creation of an interfacial layer.
ACCESSION #
4187072

 

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