Deposition of polycrystalline beta-SiC films on Si substrates at room temperature

Kuan-Lun Cheng; Huang-Chung Cheng
January 1997
Applied Physics Letters;1/13/1997, Vol. 70 Issue 2, p223
Academic Journal
Examines the deposition of polycrystalline beta-silicon carbide films on silicon substrates at room temperature by electron cyclotron resonance chemical vapor deposition. Parameters used to lower deposition temperature; Determination of grain size and plasma-induced defects; Suppression of substrate damage with the creation of an interfacial layer.


Related Articles

  • Uniform beta-SiC thin film growth on Si by low pressure rapid thermal chemical vapor deposition. Steckl, A.J.; Li, J.P. // Applied Physics Letters;4/27/1992, Vol. 60 Issue 17, p2107 

    Investigates the uniform beta-silicon carbide thin film growth on silicon by low pressure rapid thermal chemical vapor deposition (LP-RTCVD). Value of the LP-RTCVD; Components of the growth process; Effect of pressure reduction on the growth rate; Factors responsible for the low standard...

  • Chemical vapor deposition of silicon carbide thin films on titanium carbide, using 1,3.... Chaddha, A.K.; Parsons, J.D.; Wu, J.; Chen, H-S.; Roberts, D.A.; Hockenhull, H. // Applied Physics Letters;6/14/1993, Vol. 62 Issue 24, p3097 

    Examines the chemical vapor deposited (CVD)-silicon carbide thin films on titanium carbide substrates using 1,3 disilacyclobutane pyrolysis. Use of an inverted-vertical cold-wall CVD reactor; Analysis of film crystallinity as a function of substrate temperature; Relation between growth rate and...

  • Structural characterization of nanometer SiC films grown on Si. Li, J.P.; Steckl, A.J.; Golecki, I.; Reidinger, F.; Wang, L.; Ning, X.J.; Pirouz, P. // Applied Physics Letters;6/14/1993, Vol. 62 Issue 24, p3135 

    Presents the structural characterization of ultrathin silicon carbide (SiC) by rapid thermal chemical vapor deposition carbonization. Use of x-ray and electron diffraction techniques; Alignment of SiC planes; Application of the Fourier transform infrared spectrum.

  • Characterization of reconstructed SiC(100) surfaces using soft-x-ray photoemission spectroscopy. Bermudez, V.M.; Long, J.P. // Applied Physics Letters;1/23/1995, Vol. 66 Issue 4, p475 

    Examines the surface quality of betasilicon-carbide (SiC) films grown in silicon by chemical vapor deposition. Absence of O 2p SXPS peak below the valence band maximum; Impact of satellite structure on (2x1) surface in Beta SiC films; Observation of strong-surface related features in (3x2) films.

  • Growth of clean amorphous silicon-carbon alloy films by hot-filament assisted chemical vapor.... Kumbhar, A.S.; Bhusari, D.M. // Applied Physics Letters;4/3/1995, Vol. 66 Issue 14, p1741 

    Examines the growth of amorphous silicon-carbon alloy films through chemical vapor deposition. Composition of the gas mixture; Details on Raman scattering of silicon-carbon alloy films; Determination of absorption bands in carbon-hydrogen stretch mode of the infrared spectra.

  • Gas flow activated in an electron-beam plasma. Konstantinov, V.; Khmel, S. // Journal of Applied Mechanics & Technical Physics;Jan2007, Vol. 48 Issue 1, p1 

    Probe measurements of electron temperature and density, electron energy distribution functions, and plasma potential in a free gas jet activated in an electron-beam plasma and in a planar reactor are presented. The measurements are performed by single, double, and triple electrostatic probes in...

  • Mechanism of eliminating basal plane dislocations in SiC thin films by epitaxy on an etched substrate. Zhang, Z.; Moulton, E.; Sudarshan, T. S. // Applied Physics Letters;8/21/2006, Vol. 89 Issue 8, p081910 

    Homoepitaxial growth is performed on 8° off-axis SiC substrates that are molten KOH etched. The shape of a basal plane dislocation (BPD) etch pit at different stages of epitaxial growth is studied by atomic force microscopy. It is found that the growth steps covering a BPD etch pit are...

  • Defects in (111) 3C-SiC layers grown at different temperatures by VLS and CVD on 6H-SiC substrates. Marinova, Maya; Jegenyés, Nikoletta; Andreadou, Ariadne; Mantzari, Alkyoni; Lorenzzi, Jean; Ferro, Gabriel; Polychroniadis, Efstathios K. // AIP Conference Proceedings;11/1/2010, Vol. 1292 Issue 1, p95 

    In the present work homoepitaxial (111) 3C-SiC layers, grown by Chemical Vapour Deposition (CVD) on top of 3C-SiC seeds grown by the Vapour Liquid Solid (VLS) mechanism on Si-face on-axis (0001) 6H-SiC substrates, are investigated by means of Transmission Electron Microscopy (TEM). The CVD...

  • Detailed study of the influence of surface misorientation on the density of Anti-Phase Boundaries in 3C-SiC layers grown on (001) silicon. Jiao, S.; Zielinski, M.; Roy, S.; Chassagne, T.; Michaud, J. F.; Portail, M.; Alquier, D. // AIP Conference Proceedings;11/1/2010, Vol. 1292 Issue 1, p15 

    In this work we investigated the influence of the Si substrate misorientation and 3C-SiC film thickness on the density of Anti-Phase Boundaries, in order to better understand the mechanism of antiphase domain annihilation. The two highlights in our work are the utilization of [001] orientated Si...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics