TITLE

Intrinsic resputtering in pulsed-laser deposition of lead-zirconate-titanate thin films

AUTHOR(S)
Hau, S.K.; Wong, K.H.
PUB. DATE
January 1995
SOURCE
Applied Physics Letters;1/9/1995, Vol. 66 Issue 2, p245
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the pulsed laser deposition (PLD) of lead-zirconate-titanate thin films under low ambient pressure. Study on the angular deposition distributions of the elements of the films; Occurrence of a dip near the target surface normal of the deposition profile of lead; Importance of intrinsic resputtering in the PLD process.
ACCESSION #
4186889

 

Related Articles

  • Growth mechanism of YMnO3 film as a new candidate for nonvolatile memory devices. Fujimura, Norifumi; Azuma, Shu-ichiro; Aoki, Nobuaki; Yoshimura, Takeshi; Ito, Taichiro // Journal of Applied Physics;12/15/1996, Vol. 80 Issue 12, p7084 

    Presents a study which dealt with the growth mechanism of YMnO[sub3] thin films. Utilization of radio frequency magnetron sputtering method; Application of pulsed laser deposition; Fabrication of bottom electrode for the thin film epitaxy.

  • Effects of oxygen pressure on the c-axis oriented growth of LiNbO3 thin film on SiO2/Si substrate by pulsed laser deposition. Xinchang Wang; Junhui He; Jingyun Huang; Binghui Zhao; Zhizhen Ye // Journal of Materials Science Letters;Feb2003, Vol. 22 Issue 3, p225 

    Discusses the effects of oxygen pressure on the c-axis oriented growth of LiNbO3 thin film on SiO2/Si substrate by pulsed laser deposition. Growth of thin films by a number of techniques including sputtering; Optical waveguide properties of the as-grown LiNbO3 films; X-ray diffraction patterns...

  • As-doped p-type ZnO films by sputtering and thermal diffusion process. Wang, Peng; Chen, Nuofu; Yin, Zhigang; Yang, Fei; Peng, Changtao; Dai, Ruixuan; Bai, Yiming // Journal of Applied Physics;8/15/2006, Vol. 100 Issue 4, p043704 

    As-doped p-type ZnO films were grown on GaAs by sputtering and thermal diffusion process. Hall effect measurements showed that the as-grown films were of n-type conductivity and they were converted to p-type behavior after thermal annealing. Moreover, the hole concentration of As-doped p-type...

  • Phase transition of TiO thin films detected by the pulsed laser photoacoustic technique. Pérez-Pacheco, A.; Castañeda-Guzmán, R.; Oliva Montes de Oca, C.; Esparza-García, A.; Pérez Ruiz, S. // Applied Physics A: Materials Science & Processing;Mar2011, Vol. 102 Issue 3, p699 

    In this work, we present characterization of titanium oxide thin films by photoacoustic measurements to determine the ablation threshold and phase transitions from amorphous to crystalline states. The important advantages of this method are that it does not require amplification at the detection...

  • Laser modification of silver nanoclusters in SiO2 thin films. Sendova-Vassileva, M.; Sendova, M.; Troutt, A. // Applied Physics A: Materials Science & Processing;Sep2005, Vol. 81 Issue 4, p871 

    Thin films of silica containing silver nanoclusters have been deposited by magnetron co-sputtering followed by thermal annealing. Laser modification of the mean cluster size was performed using the fourth harmonic of a Nd:YAG laser with energies of between 35 and 125 mJ/cm2. The mean size of the...

  • Evidence for self-sputtering during pulsed laser deposition of Zn. Hidalgo, J. G.; Serna, R.; Haro-Poniatowski, E.; Afonso, C. N. // Applied Physics A: Materials Science & Processing;2004, Vol. 79 Issue 4-6, p915 

    Thin films of Zn have been prepared by pulsed laser deposition with a KrF excimer laser (248 nm). The laser energy density (E.D.) on the target has been varied in the 1 to 5 J/cm2 range. The results show that as the E.D. increases the material distribution changes. For low E.D.(≤ 1.6...

  • Quantification of resputtering during pulsed laser deposition. Sturm, Kai; Krebs, Hans-Ulrich // Journal of Applied Physics;7/15/2001, Vol. 90 Issue 2, p1061 

    During pulsed laser deposition in ultrahigh vacuum, the deposited material consists of a large fraction of ions with kinetic energies in the range of 100 eV. In many cases, these energetic particles induce resputtering at the film surface and lead to composition deviations. For Fe–Ag the...

  • Fabrication and photosensitivity of AgInSe[sub 2]/III�VI isotypic heterojunctions. Rud�, V. Yu.; Gremenok, V. F.; Rud�, Yu. V.; Bekimbetov, R. N.; Bodnar�, I. V. // Semiconductors;Oct99, Vol. 33 Issue 10, p1097 

    AgInSe[sub 2] thin films on glass substrates have been prepared by pulsed laser deposition. Rectifying heterojunctions with a pronounced photovoltaic effect have been fabricated for the first time by placing such films in optical contact with layered III-VI (InSe, GaSe) semiconductors. The...

  • Critical dimensions for YBCO islands grown by pulsed laser deposition. Gilmore, C.M.; Kim, J. // Applied Physics A: Materials Science & Processing;2002, Vol. 75 Issue 5, p565 

    Islands of constant width at half maximum of approximately 100 nm have been observed during the pulsed laser deposition of films of nominal thickness from 0.7 to 3.0 nm of the material YBa[sub 2] Cu[sub 3] O[sub 7-d] (YBCO) on substrates of SrTiO[sub 3] . The critical island dimensions of width,...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics