Stable secondary electron emission from chemical vapor deposited diamond films coated with

Mearini, G.T.; Krainsky, I.L.
January 1995
Applied Physics Letters;1/9/1995, Vol. 66 Issue 2, p242
Academic Journal
Examines stable secondary electron emission from cesium terminated chemical vapor deposited diamond films. Determination of primary current densities; Use of electron beam induced iodine depletion in emission activation; Characterization of the electron beam activated-alkali terminated surface.


Related Articles

  • Electron emission from boron nitride coated Si field emitters. Sugino, Takashi; Kawasaki, Seiji // Applied Physics Letters;11/3/1997, Vol. 71 Issue 18, p2704 

    Investigates the electron emission characteristics of sulfur-doped boron nitride (BN) films synthesized by plasma-assisted chemical vapor deposition. Components of the BN films; Value of the estimated energy gap; Fabrication of silicon tip field emitters coated with BN films.

  • A novel method to form conducting channels in SiOx(Si) films for field emission application. Semenenko, M.; Evtukh, A.; Yilmazoglu, O.; Hartnagel, H. L.; Pavlidis, D. // Journal of Applied Physics;Jan2010, Vol. 107 Issue 1, p013702 

    The electrical and field emission properties of SiOx(Si) films are studied. SiOx(Si) films of 40–100 nm thick are obtained by plasma-enhanced chemical vapor deposition and thermal evaporation of Si powder onto Si substrates. Nanosized electrical conducting channels are formed in SiOx(Si)...

  • Surface properties and field emission characteristics of chemical vapor deposition diamond grown on Fe/Si substrates. Hirakuri, Kenji; Yokoyama, Takahiro; Enomoto, Hirofumi; Mutsukura, Nobuki; Friedbacher, Gernot // Journal of Applied Physics;6/15/2001, Vol. 89 Issue 12, p8253 

    Electron field emission characteristics of diamond grains fabricated on iron dot-patterned silicon (Fe/Si) substrates at different methane concentrations have been investigated. The characteristics of the samples could be improved by control of the methane concentration during diamond...

  • Thin oxynitride film metal-oxide-semiconductor transistors prepared by low-pressure rapid.... McLarty, P.K.; Hill, W.L. // Applied Physics Letters;12/27/1993, Vol. 63 Issue 26, p3619 

    Demonstrates the deposition of thin silicon oxynitride films using low-pressure rapid thermal chemical vapor deposition. Results of metal-oxide-semiconductor transistor transconductance measurements; Subjection of the films under tensile stress; Performance of hot carrier stress at maximum...

  • Nucleation and growth of Cu films during the initial stage of chemical vapor deposition. Chae, Y. K.; Komiyama, H. // Journal of Applied Physics;10/1/2001, Vol. 90 Issue 7, p3610 

    The nucleation and growth of Cu nanoparticles during the initial stage of film growth by chemical vapor deposition was investigated using transmission electron microscopy and energy dispersive x-ray spectroscopy analysis. Cu nanoparticles did not migrate on the SiO[sub 2] surface because the Cu...

  • Rapid thermal low-pressure metal organic chemical vapor deposition of Fe-doped InP layers. Kreinin, O.; Bahir, G. // Applied Physics Letters;1/21/2002, Vol. 80 Issue 3, p422 

    High quality Fe-doped InP layers have been grown by means of rapid thermal low-pressure metal organic chemical vapor deposition. Trimethylindium, tertiarybutylphosphine, and ferrocene were used as indium, phosphorus, and iron sources, respectively. The best growth conditions are: V–III...

  • Electron-emission-enhanced diamond nucleation on Si by hot filament chemical vapor deposition. Qijin Chen; Zhangda Lin // Applied Physics Letters;4/22/1996, Vol. 68 Issue 17, p2450 

    Demonstrates the diamond nucleation of mirror-polished silicon by electron emission using hot filament chemical vapor deposition. Data on the nucleation density; Discussion of the mechanism of diamond nucleation; Role of electron transmission in the enhancement of the diamond nucleation.

  • Dark-current and capacitance analysis of InGaAs/InP photodiodes grown by metalorganic chemical vapor deposition. Philippe, P.; Poulain, P.; Kazmierski, K.; de Cremoux, B. // Journal of Applied Physics;3/1/1986, Vol. 59 Issue 5, p1771 

    Investigates the dark current mechanisms in indium gallium arsenide/indium phosphide double-heterostructure photodiodes grown by metalorganic chemical vapor deposition. Process of electron emission; Information on the exponential behavior of the dark current.

  • Electron emission from nitrogen-doped pyramidal-shape diamond and its battery operation. Okano, K.; Yamada, T. // Applied Physics Letters;4/21/1997, Vol. 70 Issue 16, p2201 

    Reports on a practical diamond cold cathode having pyramidal-shape array structure battery-driven flat panel display. Growth of diamond cold cathode using chemical vapor deposition technique; Achievement of pyramidal-shape array structure; Identification of the pyramids as diamonds;...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics