InAlAs/InGaAs high electron mobility transistors on low temperature InAlAs buffer layers by

Pan, N.; Elliott, J.
January 1995
Applied Physics Letters;1/9/1995, Vol. 66 Issue 2, p212
Academic Journal
Presents indium aluminum arsenide/indium gallium arsenide high electron mobility transistors (HEMT) with excellent high frequency performance. Growth of the HEMT structures; Elimination of conductive impurity spikes at the epitaxial/substrate interface; Use of trimethylarsenic and arsine as arsenic sources.


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