TITLE

InAlAs/InGaAs high electron mobility transistors on low temperature InAlAs buffer layers by

AUTHOR(S)
Pan, N.; Elliott, J.
PUB. DATE
January 1995
SOURCE
Applied Physics Letters;1/9/1995, Vol. 66 Issue 2, p212
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents indium aluminum arsenide/indium gallium arsenide high electron mobility transistors (HEMT) with excellent high frequency performance. Growth of the HEMT structures; Elimination of conductive impurity spikes at the epitaxial/substrate interface; Use of trimethylarsenic and arsine as arsenic sources.
ACCESSION #
4186877

 

Related Articles

  • Design, fabrication, and analysis of p-channel arsenide/antimonide hetero-junction tunnel transistors. Rajamohanan, Bijesh; Mohata, Dheeraj; Yan Zhu; Hudait, Mantu; Zhengping Jiang; Hollander, Matthew; Klimeck, Gerhard; Datta, Suman // Journal of Applied Physics;2014, Vol. 115 Issue 4, p1 

    In this paper, we demonstrate InAs/GaSb hetero-junction (hetJ) and GaSb homo-junction (homJ) p-channel tunneling field effect transistors (pTFET) employing a low temperature atomic layer deposited high-κ gate dielectric. HetJ pTFET exhibited drive current of 35 µA/µm in comparison to...

  • Phosphorus and antimony in GaAs as tracers for self-diffusion on the arsenic sublattice. Scholz, R. F.; Gosele, U. // Journal of Applied Physics;1/15/2000, Vol. 87 Issue 2, p704 

    Presents information on a study which investigated the arsenic self-diffusion in gallium arsenide using phosphorus and antimony. Experimental details; Diffusion model for arsenic self-diffusion; Results and discussion; Conclusions.

  • Extended appearance-potential fine structure of GaAs(001) surface. Terauchi, H.; Sekimoto, S.; Sano, N.; Kato, H.; Nakayama, M. // Applied Physics Letters;1/15/1985, Vol. 46 Issue 2, p148 

    An extended appearance-potential fine-structure measurement of the As-stable GaAs (001) surface has been carried out. The Ga-As, As-As distances of the surface were quantitatively determined for the first time. The surface structure is consistent with that proposed from results of the electron...

  • Effect of As overpressure during annealing on the nonuniformity of activation efficiency in Si-implanted GaAs layer. Sato, Takashi; Tajima, Michio; Ishida, Koichi // Applied Physics Letters;9/7/1987, Vol. 51 Issue 10, p755 

    The effects of As overpressure during annealing on nonuniformity, i.e., the variations of sheet carrier concentration and Hall mobility across wafers, have been studied for Si-implanted undoped semi-insulating GaAs. The nonuniformity was found to be suppressed by annealing under high As...

  • Study on symmetry forbidden transitions in an InxGa1-xAs/GaAs single quantum well by temperature dependence. Wang, D. P.; Chen, C. T.; Kuan, H.; Shei, S. C.; Su, Y. K. // Journal of Applied Physics;6/15/1995, Vol. 77 Issue 12, p6500 

    Presents a study which focused on symmetry forbidden transitions in an indium[subx]gallium[1-x]arsenic/gallium arsenide single quantum wells by temperature dependence. Experimental details; Results and discussion; Conclusions.

  • Near-field photoluminescence of microcrystalline arsenic oxides produced in anodically processed... Finnie, Christine M.; Bohn, Paul W. // Applied Physics Letters;2/22/1999, Vol. 74 Issue 8, p1096 

    Studies near-field photoluminescence of microcrystalline arsenic oxides produced in anodically processed gallium arsenide. Near-field photoluminescence spectroscopy of the microcrystalline and porous features; Spatial localization of the photoluminescence on the arsenic oxide microcrystalline.

  • Concentration profiles of As in a Ga rich solution during electroepitaxy of GaAs using a computer simulation technique. Qhalid Fareed, R. S.; Dhanasekaran, R.; Ramasamy, P. // Journal of Applied Physics;4/15/1994, Vol. 75 Issue 8, p3953 

    Focuses on a study which determined the concentration profiles of arsenic (As) in front of a gallium arsenide (GaAs) crystal interface growing in a gallium-rich solution during the electroepitaxial growth of GaAs layers. Factors that were considered in the computer simulation of concentration...

  • Patterned self-assembly of one-dimensional arsenic particle arrays in GaAs by controlled.... Kiehl, R.A.; Yamaguchi, M. // Applied Physics Letters;1/22/1996, Vol. 68 Issue 4, p478 

    Presents a process for the patterned self-assembly of arsenic particles in gallium arsenide layers. Use of crystal strain and composition in the formation of arsenic precipitates; Control of the lateral particle and vertical positions; Size of arsenic particles in the fabrication process.

  • Characterization of the EL2 center in GaAs by optical admittance spectroscopy. Dueñas, S.; Castán, E.; de Dios, A.; Bailón, L.; Barbolla, J.; Pérez, A. // Journal of Applied Physics;5/15/1990, Vol. 67 Issue 10, p6309 

    Characterizes the EL2 center, one of the important native centers in gallium arsenide, by optical admittance spectroscopy. Relation of EL2 with the arsenic antisite As[subGa]; Techniques used for the study of EL2; Mechanisms to regenerate the initial optical properties of EL2.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics