Impact ionization coefficients in Si[sub 1-x]Ge[sub x]

Lee, J.; Gutierrez-Aitken, A.L.
January 1995
Applied Physics Letters;1/9/1995, Vol. 66 Issue 2, p204
Academic Journal
Determines the electron and hole impact ionization coefficients in Si[sub 1-x]Ge[sub x] alloys. Performance of carrier multiplication measurements; Variation of the hole to electron coefficient ratio; Characteristics of the temperature dependent current voltage.


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