TITLE

Resistivity of boron and phosphorus doped polycrystalline Si[sub 1-x]Ge[sub x] films

AUTHOR(S)
Bang, David S.; Min Cao
PUB. DATE
January 1995
SOURCE
Applied Physics Letters;1/9/1995, Vol. 66 Issue 2, p195
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the annealing behavior of boron and phosphorus ion implanted films of polycrystalline Si[sub 1-x]Ge[sub x]. Dosages of the implantation; Determination of sheet resistance of the films; Manifestation of minima as a function of anneal time.
ACCESSION #
4186871

 

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