Hot-carrier-temperature model for the dark current of quantum-well infrared photodetectors

Man, P.; Pan, D.S.
January 1995
Applied Physics Letters;1/9/1995, Vol. 66 Issue 2, p192
Academic Journal
Proposes a hot-carrier-temperature model to calculate the dark current of a p-type gallium arsenide/gallium aluminum arsenide quantum well infrared photodetector. Incorporation of hot-carrier effects on mobile-carrier concentration and the drift velocity; Agreement of calculation result with the experimental data; Effect of the increase of carrier concentration.


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