TITLE

Electrical characterization of Al[sub x]Ga[sub 1-x]As grown by low-pressure organometallic vapor

AUTHOR(S)
Paraskevopoulos, Nicholas G.; McAfee, Sigrid R.
PUB. DATE
January 1995
SOURCE
Applied Physics Letters;1/9/1995, Vol. 66 Issue 2, p183
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the electrical properties of Al[sub x]Gal[sub 1-x]As grown by organometallic vapor phase epitaxy. Use of trimethylamine alane as aluminum precursor; Fabrication and characterization of high quality aluminum gallium arsenide Schottky barriers; Exhibition of low overall trap concentrations by the epilayers.
ACCESSION #
4186867

 

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