A study of the SO molecule with photoelectron spectroscopy using synchroton radiation

Dyke, John M.; Haggerston, Darren
January 1997
Journal of Chemical Physics;1/15/1997, Vol. 106 Issue 3, p821
Academic Journal
Studies the silicon oxide (SO) molecule by photoelectron spectroscopy using vacuum ultraviolet radiation from a synchroton as the photon source. Resonances which appear in the constant ionic state spectra; Photoelectron spectra showing that autoionization can alter the intensities of the vibrational components in a photoelectron band.


Related Articles

  • Characterization of the implantation damage in SiO2 with x-ray photoelectron spectroscopy. Ajioka, Tsuneo; Ushio, Shintaro // Applied Physics Letters;5/19/1986, Vol. 48 Issue 20, p1398 

    X-ray photoelectron spectroscopy (XPS) has been applied to characterize the damage introduced into SiO2 by ion implantation. By measuring the peak width of Si2p from SiO2 which corresponds to perturbation of the SiO2 network, good depth profiles of the damage have been obtained for implanted...

  • Interface control of Bi[sub 4]Ti[sub 3]O[sub 12] film growth on Si(100) by use of an ultrathin silicon oxynitride buffer layer. Rokuta, E.; Choi, J.-H.; Hotta, Y.; Tabata, H.; Kobayashi, H.; Kawai, T. // Applied Physics Letters;9/17/2001, Vol. 79 Issue 12, p1858 

    Electrical properties of Bi[sub 4]Ti[sub 3]O[sub 12] (BiT) films on Si(100) were improved due to insertion of silicon oxynitride (SiON) buffer layers with thicknesses of 1–2 nm. Capacitance–voltage measurements indicated that the improvement was largely attributable to better Si...

  • Bonding structure of silicon oxide films. Feldman, Albert; Sun, Y. N.; Farabaugh, E. N. // Journal of Applied Physics;3/15/1988, Vol. 63 Issue 6, p2149 

    Presents information on a study which determined the tetrahedral probability parameters based on an analysis of x-ray photoelectron spectroscopy measurements of the oxygen 1s and silicon 2p lines in films of the silicon oxide[subx] system. Types of tetrahedra; Calculation of the quantity of...

  • Visible photoluminescence in amorphous SiO[sub x] thin films prepared by silicon evaporation under a molecular oxygen atmosphere. Molinari, M.; Rinnert, H.; Vergnat, M. // Applied Physics Letters;6/2/2003, Vol. 82 Issue 22, p3877 

    A simple reactive evaporation method is proposed to prepare light-emitting amorphous SiO[sub x] thin films. By evaporating pure silicon in a controlled molecular oxygen atmosphere, it is possible to obtain a very large composition range. By changing the pressure in the preparation chamber, x can...

  • Observation of Si cluster formation in SiO[sub 2] films through annealing process using x-ray photoelectron spectroscopy and infrared techniques. Furukawa, Katsuhiko; Liu, Yichun; Nakashima, Hiroshi; Gao, Dawei; Uchino, Kiichiro; Muraoka, Katsunori; Tsuzuki, Hirohisa // Applied Physics Letters;2/9/1998, Vol. 72 Issue 6 

    SiO[sub 2] films having high breakdown characteristics were deposited by a sputtering-type electron cyclotron resonance microwave plasma at room temperature. As-deposited films were annealed in an Ar ambient at temperatures ranging from 450 to 1000 °C. Transmitted infrared (IR) absorption and...

  • Low temperature catalytic formation of Si-based metal–oxide–semiconductor structure. Kobayashi, Hikaru; Yuasa, Toshiro; Nakato, Yoshihiro; Yoneda, Kenji; Todokoro, Yoshihiro // Journal of Applied Physics;10/1/1996, Vol. 80 Issue 7, p4124 

    Examines the low temperature catalytic formation of silicon-based metal-oxide-semiconductor structure. Result of x-ray photoelectron spectroscopy and transmission electron micrography measurements; Experimental details; Details on the development of a method for forming thick silicon oxide...

  • Plasma-nitrided silicon-rich oxide as an extension to ultrathin nitrided oxide gate dielectrics. Cubaynes, F. N.; Venezia, V. C.; van der Marel, C.; Snijders, J. H. M.; Everaert, J. L.; Shi, X.; Rothschild, A.; Schaekers, M. // Applied Physics Letters;4/25/2005, Vol. 86 Issue 17, p172903 

    We have investigated the mechanism of N incorporation, during plasma nitridation, in thermally grown ultrathin (<2 nm) SiO2 films and deposited silicon-rich oxide films. X-ray photoelectron spectroscopy analysis indicates that N atoms exchange mainly with O to bond with Si atoms in ultrathin...

  • Evidence of direct SiO2 etching by fluorocarbon molecules under ion bombardment. Takada, N.; Toyoda, H.; Murakami, I.; Sugai, H. // Journal of Applied Physics;1/1/2005, Vol. 97 Issue 1, p013534 

    In a beam apparatus, influence of fluorocarbon gas (C5F8, C4F8, and CF4 molecules) flux onto SiO2 etching reaction is investigated in comparison to a case of CF2 radical flux. Fluorocarbon molecules or CF2 radicals are incident onto SiO2 surface with Ar+ beam of energy 100–900 eV. Atomic...

  • Size and shape of supported zirconia nanoparticles determined by x-ray photoelectron spectroscopy. Yubero, F.; Mansilla, C.; Ferrer, F. J.; Holgado, J. P.; González-Elipe, A. R. // Journal of Applied Physics;6/15/2007, Vol. 101 Issue 12, p124910 

    The initial stages of growth of zirconia nanoparticles deposited on SiO2, Y2O3, and CeO2 substrates have been studied by the x-ray photoelectron spectroscopy peak shape analysis. ZrO2 was deposited by plasma decomposition of a volatile Zr(OtBu)4 precursor. The electronic interactions at each...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics