Effect of arsenic dimer species to silicon doping of GaAs layers prepared by molecular beam epitaxy

Wu, B.J.; Mii, Y.J.
January 1991
Applied Physics Letters;1/28/1991, Vol. 58 Issue 4, p391
Academic Journal
Focuses on the observation of a strong dependence of Si doping on dimer arsenic flux and substrate temperature for GaAs films grown by molecular beam epitaxy. Dependence of Si doping levels on the cracking efficiency and substrate temperature; Correlation between measured carrier concentration of the grown films and cracker temperature.


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