TITLE

The effect of carbon on the valence band offset of compressively strained

AUTHOR(S)
Chang, C.L.; Amour, A. St.
PUB. DATE
March 1997
SOURCE
Applied Physics Letters;03/24/97, Vol. 70 Issue 12, p1557
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the effect of carbon on the valence band offset of compressively strained silicon[sub 1-x-y]germanium[sub x]carbon[sub y]/(100) silicon heterojunctions. Deposition of the heterojunction by thermal chemical vapor deposition; Measurement of valence band offset by complex admittance spectroscopy; Dependence of conductance on temperature.
ACCESSION #
4178162

Tags: CARBON;  CONDUCTION electrons;  HETEROSTRUCTURES

 

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