High-resistance layers in n-type 4H-silicon carbide by hydrogen ion implantation

Nadella, Ravi K.; Capano, M.A.
February 1997
Applied Physics Letters;2/17/1997, Vol. 70 Issue 7, p886
Academic Journal
Investigates the effect of hydrogen ion implantation damage on the resistivity of n-type 4 hydrogen (H)-silicon carbide. Properties of silicon carbide; Need for semi-insulating substrates for the fabrication of high-quality electronic devices; Reasons for performing hydrogen implantation.


Related Articles

  • Low-dose n-type nitrogen implants in 4H-SiC. Saks, N. S.; Ryu, S.-H.; Suvorov, A. V. // Applied Physics Letters;12/23/2002, Vol. 81 Issue 26, p4958 

    Lightly-doped n-type layers have been fabricated in 4H-SiC by low-dose implantation of nitrogen ions and characterized using the Hall effect. Near-bulk electron mobility is achieved in the implanted layers. Activation rates for the implanted nitrogen ions, energies and densities of the two-level...

  • Boron and aluminum implantation in alpha-SiC. Ahmed, S.; Barbero, C.J. // Applied Physics Letters;7/4/1994, Vol. 65 Issue 1, p67 

    Reports comparison of experimental implantation profiles in 6 hydrogen alpha-silicon carbide with theoretical results obtained using TRIM profile simulator. Components in the development of a device process technology based on ion implantation; Conformity of the result with that of TRIM...

  • Influence of oxygen on the ion-beam synthesis of silicon carbide buried layers in silicon. Artamanov, V. V.; Valakh, M. Ya.; Klyuı, N. I.; Mel’nik, V. P.; Romanyuk, A. B.; Romanyuk, B. N.; Yukhimchuk, V. A. // Semiconductors;Dec98, Vol. 32 Issue 12, p1261 

    The properties of silicon structures with silicon carbide (SiC) buried layers produced by highdose carbon implantation followed by a high-temperature anneal are investigated by Raman and infrared spectroscopy. The influence of the coimplantation of oxygen on the features of SiC buried layer...

  • Dose dependence of microstructural evolution in oxygen-ion-implanted silicon carbide. Ishimaru, Manabu; Liu, C.-L. // Applied Physics Letters;9/6/1999, Vol. 75 Issue 10, p1392 

    Studies the dose dependence of microstructural evolution in oxygen-ion-implanted silicon carbide. Use of transmission electron microscopy and Rutherford backscattering spectroscopy and ion channeling in the study.

  • Empirical depth profile simulator for ion implantation in 6Hα-SiC. Ahmed, S.; Barbero, C. J.; Sigmon, T. W.; Erickson, J. W. // Journal of Applied Physics;6/15/1995, Vol. 77 Issue 12, p6194 

    Presents a study which developed an empirical depth profile simulator for ion implantation in Hα-silicon carbide. Theoretical background on silicon carbide semiconductor devices and its ion implantation; Experimental methods; Measurements and results.

  • Behavior of ion-implanted junction diodes in 3C SiC. Avila, R. E.; Kopanski, J. J.; Fung, C. D. // Journal of Applied Physics;10/15/1987, Vol. 62 Issue 8, p3469 

    Examines the formation of p-n junction diodes by ion implantation of boron or aluminum (Al) in silicon carbide annealing. Current-voltage characteristics of the Al-implanted structures; Use of photoresist liftoff; Cause for the large values of the ideality factor.

  • Effects of implantation temperature and ion flux on damage accumulation in Al-implanted 4H-SiC. Zhang, Y.; Weber, W. J.; Jiang, W.; Wang, C. M.; Hallén, A.; Possnert, G. // Journal of Applied Physics;2/15/2003, Vol. 93 Issue 4, p1954 

    The effects of implantation temperature and ion flux on damage accumulation on both the Si and C sublattices in 4H-SiC have been investigated under 1.1-MeV Al[sup 2+, sub 2] irradiation at temperatures from 150 to 450 K. The rate of damage accumulation decreases dramatically, and the damage...

  • Effect of self-implantation on structure and oxidation behavior of single crystal beta-SiC. Honghua Du; Libera, Matthew; Zunde Yang; Po-Jen Lai; Jacobson, Dale C.; Wang, Yu. C.; Davis, Robert F. // Applied Physics Letters;1/25/1993, Vol. 62 Issue 4, p423 

    Examines the effect of self-implantation on structure and oxidation behavior of beta-silicon carbide crystals (SiC). Occurrence of lattice recovery during the implantation process; Acceleration of SiC oxidation rate; Absence of amorphization in the implanted region.

  • Formation of semi-insulating 6H-SiC layers by vanadium ion implantations. Kimoto, T.; Nakajima, T.; Matsunami, H.; Nakata, T.; Inoue, M. // Applied Physics Letters;8/19/1996, Vol. 69 Issue 8, p1113 

    Vanadium ion (V+) implantation has been successfully applied to the formation of semiinsulating 6H-SiC layers. The resistivity of V+-implanted layers strongly depended on the conduction type of initial 6H-SiC crystals. The resistivity at room temperature exceeded 1012 Ω cm and 106 Ω cm for...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics